MOSFET - PowerTrench , N-Channel, Dual Cool , Shielded Gate 150 V, 40 A, 17 m FDMS86200DC www.onsemi.com General Description This NChannel MOSFET is produced using ON Semiconductors ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate TM technology. Advancements in both silicon and Dual Cool package S D technologies have been combined to offer the lowest r while DS(on) S D maintaining excellent switching performance by extremely low JunctiontoAmbient thermal resistance. D S D G Features Shielded Gate MOSFET Technology N-Channel MOSFET TM Dual Cool Top Side Cooling DFN8 Package D Max r = 17 m at V = 10 V, I = 9.3 A DS(on) GS D D D D Max r = 25 m at V = 6 V, I = 7.8 A DS(on) GS D Pin 1 High Performance Technology for Extremely Low r DS(on) G S 100% UIL Tested S Pin 1 S RoHS Compliant Top Bottom Applications DFN8, Dual Cool CASE 506EG Primary MOSFET in DC DC Converters Secondary Synchronous Rectifier Load Switch MARKING DIAGRAM MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) AYWWZZ A 86200 Symbol Parameter Ratings Unit V Drain to Source Voltage 150 V DS V Gate to Source Voltage 20 V GS I Drain Current: A D Continuous, T = 25C 40 C Continuous, T = 25C (Note 1a) 9.3 A Pulsed (Note 4) 100 86200 = Specific Device Code A = Assembly Location E Single Pulse Avalanche Energy 294 mJ AS Y = Year of Production, Last Number (Note 3) WW = Work Week Number ZZ = Assembly Lot Number P Power Dissipation: W D T = 25C 125 C T = 25C (Note 1a) 3.2 A T , T Operating and Storage Junction 55 to +150 C J STG ORDERING INFORMATION Temperature Range See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2020 Rev. 5 FDMS86200DC/DFDMS86200DC Table 1. THERMAL CHARACTERISTICS Symbol Characteristic Value Unit R Thermal Resistance, Junction to Case (Top Source) 2.5 JC R Thermal Resistance, Junction to Case (Bottom Drain) 1.0 JC R Thermal Resistance, Junction to Ambient (Note 1a) 38 JA C/W Thermal Resistance, Junction to Ambient (Note 1b) 81 R JA R Thermal Resistance, Junction to Ambient (Note 1i) 16 JA Thermal Resistance, Junction to Ambient (Note 1j) 23 R JA Thermal Resistance, Junction to Ambient (Note 1k) 11 R JA ORDERING INFORMATION AND PACKAGE MARKING Device Top Marking Package Reel Size Tape Width Shipping FDMS86200DC 86200 DFN8 13 12 mm 3000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage I = 250 A, V = 0 V 150 V D GS BV DSS Breakdown Voltage Temperature I = 250 A, referenced to 25C 105 mV/C / T D J Coefficient IDSS Zero Gate Voltage Drain Current V = 120 V, V = 0 V 1 A DS GS IGSS Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GS DS ON CHARACTERISTICS V = V , I = 250 A V Gate to Source Threshold Voltage 2.0 3.3 4.0 V GS(th) GS DS D V GS(th) Gate to Source Threshold Voltage I = 250 A, referenced to 25 C 11 mV/C / T D J Temperature Coefficient V = 10 V, I = 9.3 A 14 17 GS D V = 6 V, I = 7.8 A 17 25 GS D r Static Drain to Source On Resistance m DS(on) V = 10 V, I = 9.3 A, T = 125 C 29 35 GS D J g Forward Transconductance V = 10 V, I = 9.3 A 32 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance 2110 2955 pF iss C Output Capacitance V = 75 V, V = 0 V, 205 290 pF DS GS oss f = 1 MHz C Reverse Transfer Capacitance 8.1 15 pF rss R Gate Resistance 0.1 1.5 3.0 g SWITCHING CHARACTERISTICS t Turn-On Delay Time 16 29 ns d(on) t Rise Time 4 10 ns r V = 75 V, I = 9.3 A, V = 10 V, DD D GS R = 6 GEN t Turn-Off Delay Time 23 37 ns d(off) t Fall Time 5 10 ns f www.onsemi.com 2