DATA SHEET www.onsemi.com MOSFET N-Channel, Shielded Gate, Pin 1 S Pin 1 S S POWERTRENCH G D D D 150 V, 45 A, 12.4 m D Top Bottom FDMS86255 PQFN8 5X6, 1.27P CASE 483AG Description This NChannel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate D S technology. This process has been optimized for the on state S D resistance and yet maintain superior switching performance. D S Features Shielded Gate MOSFET Technology D G Max R = 12.4 m at V = 10 V, I = 10 A DS(on) GS D Max R = 15.5 m at V = 6 V, I = 8 A DS(on) GS D Advanced Package and Silicon Combination for Low R and DS(on) MARKING DIAGRAM High Efficiency Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery Y&Z&3&K MSL1 Robust Package Design 100% UIL Tested RoHS Compliant Y = Logo These Device is Halogen Free &Z = Assembly Location &3 = Date Code (Year and Week) Applications &K = Specific Device Code OringFET / Load Switching ORDERING INFORMATION Synchronous Rectification DCDC Conversion See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: Semiconductor Components Industries, LLC, 2002 1 FDMS86255/D August, 2021 Rev. 0FDMS86255 MOSFET MAXIMUM RATINGS T = 25 C unless otherwise noted A Symbol Parameter Rating Unit V Drain to Source Voltage 150 V DS V Gate to Source Voltage 20 V GS I A Drain Current Continuous, T = 25C 62 D C Continuous, T = 25C (Note 1a) 10 A Pulsed (Note 4) 271 E Single Pulse Avalanche Energy (Note 3) 541 mJ AS P Power Dissipation, T = 25C 113 W D C Power Dissipation, T = 25C (Note 1a) 2.7 A T T Operating and Storage Junction Temperature Range 55 to +150 C J, STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Rating Unit R Thermal Resistance, Junction to Case 1.1 C/W JC R Thermal Resistance, Junction to Ambient (Note 1a) 45 JA ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 150 V DSS D GS BV Breakdown Voltage Temperature I = 250 A, referenced to 25C 109 mV/C DSS D Coefficient T J I Zero Gate Voltage Drain Current V = 120 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage V = V , I = 250 A 2.0 3.0 4.0 V GS DS D VGS(th) Gate to Source Threshold Voltage I = 250 A, referenced to 25C 11 mV/C D Temperature Coefficient T J R Static Drain to Source On Resistance V = 10 V, I = 10 A 9.5 12.4 m DS(ON) GS D V = 6 V, I = 8 A 11.5 15.5 GS D V = 10 V, I = 10 A, T = 125C 19 25 GS D J g Forward Transconductance V = 5 V, I = 10 A 35 S FS DS D DYNAMIC CHARACTERISTICS C Input Capacitance V = 75 V, V = 0 V, 3200 4480 pF ISS DS GS f = 1 MHz C Output Capacitance 291 410 pF OOS Crss Reverse Transfer Capacitance 11 20 pF R Gate Resistance 0.1 0.7 2.1 g SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 75 V, I = 10 A, 21 34 ns d(on) DD D V = 10 V, R = 6 GS GEN t Rise Time 4.5 10 ns r t TurnOff Delay Time 28 45 ns d(off) t Fall Time 6.2 12 ns f V = 75 V, Q Total Gate Charge V = 0 V to 10 V 45 63 nC g GS DD I = 10 A D Q Total Gate Charge V = 0 V to 6 V 29 41 nC g GS www.onsemi.com 2