FDMS86300DC POWERTRENCH MOSFET, N-Channel, DUAL COOL 56 80 V, 110 A, 3.1 m General Description www.onsemi.com This N Channel MOSFET is produced using Fairchild Semiconductors advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL package technologies have been combined to S D offer the lowest r while maintaining excellent switching DS(on) S D performance by extremely low Junction to Ambient thermal D resistance. S D G Features DUAL COOL Top Side Cooling PQFN package N-Channel MOSFET Max r = 3.1 m at V = 10 V, I = 24 A DS(on) GS D D D D Max r = 4.0 m at V = 8 V, I = 21 A DS(on) GS D D High performance technology for extremely low r DS(on) Pin 1 G 100% UIL Tested S S Pin 1 S RoHS Compliant Top Bottom Typical Applications DFN8 5.1x6.15 Synchronous Rectifier for DC/DC Converters (Dual Cool 56) Telecom Secondary Side Rectification CASE 506EG High End Server/Workstation Vcore Low Side MARKING DIAGRAM XXXXXX = Device Code A = Assy Location Y = Year Code WW = Work Week Code ZZ = Assy Lot Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 2 FDMS86300DC/DFDMS86300DC PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping 86300 FDMS86300DC UDFN8 13 12 mm 3000 Units/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Ratings Units 80 V V Drain to Source Voltage DS 20 V V Gate to Source Voltage GS 110 A I Drain Current Continuous T = 25C D C 24 Continuous T = 25C (Note 1a) A 260 Pulsed (Note 2) 240 mJ E Single Pulse Avalanche Energy (Note 3) AS 125 W P Power Dissipation T = 25C D C 3.2 Power Dissipation T = 25C (Note 1a) A 55 to +150 C T , T Operating and Storage Junction Temperature Range J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Conditions Min. Typ. Max. Units OFF CHARACTERISTICS BV Drain to Source Breakdown Voltage I = 250 A, V = 0 V 80 V DSS D GS Breakdown Voltage Temperature I = 250 A, referenced to 25C 45 mV/C BV D DSS Coefficient T J I Zero Gate Voltage Drain Current V = 64 V, V = 0 V 1 A DSS DS GS I Gate to Source Leakage Current V = 20 V, V = 0 V 100 nA GSS GS DS ON CHARACTERISTICS V Gate to Source Threshold Voltage V = V , I = 250 A 2.5 3.3 4.5 V GS(th) GS DS D Gate to Source Threshold Voltage Tempera- I = 250 A, referenced to 25C 11 mV/C V D GS(th) ture Coefficient T J r Static Drain to Source On Resistance V = 10 V, I = 24 A 2.6 3.1 m DS(on) GS D V = 8 V, I = 21 A 3.1 4.0 GS D V = 10 V, I = 24 A, T = 125C 4.1 5.0 GS D J 79 g Forward Transconductance V = 10 V, I = 24 A S FS DD D DYNAMIC CHARACTERISTICS V = 40 V, V = 0 V, f = 1 MHz 5265 7005 pF C Input Capacitance DS GS ISS 929 1235 pF C Output Capacitance OSS 21 50 pF C Reverse Transfer Capacitance RSS 0.1 1.2 2.6 R Gate Resistance G www.onsemi.com 2