SI3139KL-TP Micro Commercial Components (MCC)

M C C R Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth SI313 9K L         Features Lead Free Product is Acquired Halogen free available upon request by adding suffix-H Epoxy meets UL 94 V-0 flammability rating P-Channel MOSFET Equivalent Circuit Moisture Sensitivity Level 1 Operated at Low Logic Level Gate Drive P-Channel Switch with Low RDS(on) Surface Mount Package Marking :39 SOT- 883 Absolute maximum ratings @ 25
Symbol Parameter Value Unit V Drain-source Voltage -20 V DS V Gate-source Voltage V GS 12 D (1) A I Continuous Drain Current -0.68 A D B I Pulsed Drain Current -1.2 A DM (2) P Total Power Dissipation 100 mW D C T Operating Junction Temperature -55 to +150
J E T Storage Temperature -55 to +150
STG L N M T Lead Temperature for Soldering Purposes 260
M L RthJA Thermal Resistance fromJunction to Ambient 1250
/W O Electrical Characteristics @ 25 C Unless Otherwise Specified K F G Symbol Parameter Min Typ Max Units 1. GATE STATIC PARAMETERS 2. SOURCE H V(BR)DSS Drain-Source Breakdown Voltage J 3. DRAIN -20 --- --- Vdc (V =0Vdc, I =-250 Adc) GS D V Gate-Threshold Voltage GS(th) DIMENSIONS -0.35 --- -1.1 Vdc (VDS=VGS, ID= -250Adc) MM INCHES I Gate-body Leakage GSS DIM --- --- A 20 MAX NOTE MIN MAX MIN (V =10V, V = 0V) GS DS A 0.018 0.022 0.450 0.550 I Zero Gate Voltage Drain Current DSS --- --- -1 Adc 0.000 0.004 0.010 0.100 B (V =-20Vdc, V =0Vdc) DS GS 0.037 0.041 C 0.950 1.050 V Diode Forward Voltage SD 0.022 0.026 --- --- -1.2 Vdc 0.550 0.650 D (I =-0.5A,VGS=0V S E 0.018REF. 0.450REF. r Drain-Source On-Resistance DS(on) 0.450REF. F 0.018REF. (V =-4.5Vdc,I =-1.0Adc) --- --- 0.52 GS D G 0.011 0.015 0.270 0.370 (V =-2.5Vdc,I =-0.8Adc) --- --- 0.70 GS D 0.004 0.008 0.100 0.200 H (V =-1.8Vdc,I =-0.5Adc) --- 0.95 --- GS D J 0.025REF. 0.635REF. 0.300 0.400 0.012 0.016 Forward transconductance K g FS --- 1.2 --- S 0.008 0.012 0.200 0.300 L (V =-10Vdc, I =-0.54Adc) DS D 0.002REF. 0.050REF. M (4) DYNAMIC PARAMETERS N 0.011 0.015 0.270 0.370 C Input Capacitance --- 113 170 iss V =-16Vdc, DS C Output Capacitance --- 15 25 OSS V =0Vdc pF GS C Reverse Transfer rSS f=1MHz --- 9 15 capacitance (4) SWITCHING PARAMETERS (3) t Turn-on Time --- 9.0 --- d(on) V =-4.5V, DD (3) t Turn-off Time d(off) --- 32.7 --- V =-10V, GS ns ns (3) t I =-200mA r Rise Time D --- 5.8 --- (3) R =10 GEN t r Fall Time --- 20.3 --- Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2.Pulse est Pulse : width=300s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. Graranted y designnot subject to producting. www.mccsemi.com 2016/09/02 Revision: A 1 of 3 www.mccsemi.com M C C R SI3 1 39KL Micro Commercial Components SLFDO&KDUDFWHULVWLFV \ 7 Output Characteristics Transfer C haracteristics -3.0 -2.5 V =-4V,-5V GS V =-3V DS T =25 a Pulsed Pulsed V =-3V -2.5 GS -2.0 V =-2.5V GS -2.0 T =25 a T =100 a -1.5 V =-2V -1.5 GS -1.0 -1.0 V =-1.5V GS -0.5 -0.5 -0.0 -0.0 -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE V (V) GATE TO SOURCE VOLTAGE V (V) DS GS R I R V DS(ON) D DS(ON) GS 1200 1000 T =25 a Pulsed 1100 Pulsed 900 I =-1A D 1000 V =-1.8V 800 GS 900 700 800 700 T =100 600 a V =-2.5V GS 600 500 500 T =25 a 400 400 V =-4.5V GS 300 300 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1 -2 -3 -4 -5 DRAIN CURRENT I (A) GATE TO SOURCE VOLTAGE V (V) D GS Threshold Voltage I V S SD -2 -0.8 Pulsed -1 -0.6 I =-250A D -0.4 T =100 a T =25 a -0.1 -0.2 -0.01 -0.0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 25 50 75 100 125 SOURCE TO DRAIN VOLTAGE V (V) JUNCTION TEMPERATURE T ( ) SD J www.mccsemi.com 2 of 3 2016/09/02 Revision: A ON-RESISTANCE R (m) DS(ON) SOURCE CURRENT I (A) S DRAIN CURRENT I (A) D ON-RESISTANCE R (m) THRESHOLD VOLTAGE V (V) DS(ON) TH DRAIN CURRENT I (A) D