M C C
R
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
SI313 9K L
Features
Lead Free Product is Acquired
Halogen free available upon request by adding suffix-H
Epoxy meets UL 94 V-0 flammability rating
P-Channel MOSFET
Equivalent Circuit
Moisture Sensitivity Level 1
Operated at Low Logic Level Gate Drive
P-Channel Switch with Low RDS(on)
Surface Mount Package
Marking :39
SOT- 883
Absolute maximum ratings @ 25
Symbol Parameter Value Unit
V Drain-source Voltage -20 V
DS
V Gate-source Voltage V
GS 12
D
(1)
A
I Continuous Drain Current -0.68 A
D
B
I Pulsed Drain Current -1.2 A
DM
(2)
P Total Power Dissipation 100 mW
D
C
T Operating Junction Temperature -55 to +150
J
E
T Storage Temperature -55 to +150
STG
L
N
M
T Lead Temperature for Soldering Purposes 260 M
L
RthJA Thermal Resistance fromJunction to Ambient 1250 /W
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
K
F
G
Symbol Parameter Min Typ Max Units
1. GATE
STATIC PARAMETERS
2. SOURCE
H
V(BR)DSS Drain-Source Breakdown Voltage
J
3. DRAIN
-20 --- --- Vdc
(V =0Vdc, I =-250 Adc)
GS D
V Gate-Threshold Voltage
GS(th) DIMENSIONS
-0.35 --- -1.1 Vdc
(VDS=VGS, ID= -250Adc)
MM
INCHES
I Gate-body Leakage
GSS
DIM
--- --- A
20 MAX NOTE
MIN MAX MIN
(V =10V, V = 0V)
GS DS
A 0.018 0.022 0.450 0.550
I Zero Gate Voltage Drain Current
DSS
--- --- -1 Adc
0.000 0.004 0.010 0.100
B
(V =-20Vdc, V =0Vdc)
DS GS
0.037 0.041
C 0.950 1.050
V Diode Forward Voltage
SD
0.022 0.026
--- --- -1.2 Vdc 0.550 0.650
D
(I =-0.5A,VGS=0V
S
E 0.018REF. 0.450REF.
r Drain-Source On-Resistance
DS(on)
0.450REF.
F 0.018REF.
(V =-4.5Vdc,I =-1.0Adc) --- --- 0.52
GS D
G 0.011 0.015 0.270 0.370
(V =-2.5Vdc,I =-0.8Adc) --- --- 0.70
GS D
0.004 0.008 0.100 0.200
H
(V =-1.8Vdc,I =-0.5Adc) --- 0.95 ---
GS D
J 0.025REF. 0.635REF.
0.300 0.400
0.012 0.016
Forward transconductance K
g
FS
--- 1.2 --- S 0.008 0.012 0.200 0.300
L
(V =-10Vdc, I =-0.54Adc)
DS D
0.002REF. 0.050REF.
M
(4)
DYNAMIC PARAMETERS
N 0.011 0.015 0.270 0.370
C Input Capacitance --- 113 170
iss
V =-16Vdc,
DS
C Output Capacitance --- 15 25
OSS
V =0Vdc pF
GS
C Reverse Transfer
rSS
f=1MHz
--- 9 15
capacitance
(4)
SWITCHING PARAMETERS
(3)
t Turn-on Time --- 9.0 ---
d(on)
V =-4.5V,
DD
(3)
t Turn-off Time
d(off) --- 32.7 ---
V =-10V,
GS
ns
ns
(3)
t I =-200mA
r Rise Time D --- 5.8 ---
(3) R =10
GEN
t
r Fall Time --- 20.3 ---
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2.Pulse est Pulse : width=300s, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Graranted y designnot subject to producting.
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2016/09/02
Revision: A
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SI3 1 39KL
Micro Commercial Components
SLFDO&KDUDFWHULVWLFV \ 7
Output Characteristics
Transfer C haracteristics
-3.0 -2.5
V =-4V,-5V
GS
V =-3V
DS
T =25
a
Pulsed
Pulsed V =-3V
-2.5
GS
-2.0
V =-2.5V
GS
-2.0
T =25
a T =100
a
-1.5
V =-2V
-1.5
GS
-1.0
-1.0
V =-1.5V
GS
-0.5
-0.5
-0.0 -0.0
-0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE V (V) GATE TO SOURCE VOLTAGE V (V)
DS GS
R I R V
DS(ON) D DS(ON) GS
1200 1000
T =25
a
Pulsed
1100
Pulsed
900
I =-1A
D
1000
V =-1.8V
800
GS
900
700
800
700
T =100
600
a
V =-2.5V
GS
600
500
500
T =25
a
400
400
V =-4.5V
GS
300 300
-0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1 -2 -3 -4 -5
DRAIN CURRENT I (A) GATE TO SOURCE VOLTAGE V (V)
D GS
Threshold Voltage
I
V
S
SD
-2 -0.8
Pulsed
-1
-0.6
I =-250A
D
-0.4
T =100
a T =25
a
-0.1
-0.2
-0.01 -0.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 25 50 75 100 125
SOURCE TO DRAIN VOLTAGE V (V) JUNCTION TEMPERATURE T ( )
SD J
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2016/09/02
Revision: A
ON-RESISTANCE R (m)
DS(ON)
SOURCE CURRENT I (A)
S
DRAIN CURRENT I (A)
D
ON-RESISTANCE R (m)
THRESHOLD VOLTAGE V (V)
DS(ON)
TH
DRAIN CURRENT I (A)
D