SI2305 Features TrenchFET Power Mosfet Load Switch for Portable Devices Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-Channel MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings o o Operating Junction Temperature Range : -55 C to +150 C o o Storage Temperature Range: -55 C to +150 C SOT-23 o Thermal Resistance: 90 C/W Junction to Ambient A D 3 Parameter Symbol Rating Unit B C V Drain -source Voltage -8 V DS 1 2 Gate -Source Voltage V 8 V GS F E (Note 2) I -4.1 A Drain Current-Continuous D Drain Source Current-Continuous I -0.8 A S G H J P Total Power Dissipation D 1.4 W L K Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS INCHES MM DIM NOTE MIN MAX MIN MAX A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Internal Structure C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 D E 0.067 0.083 1.70 2.10 F 0.018 0.024 0.45 0.60 1. * 7 E G 0.01 0.15 0.0004 0.006 2. H 0.035 0.043 0.90 1.10 3. G J 0.003 0.007 0.08 0.18 K 0.012 0.020 0.30 0.51 Marking:S5 S L 0.007 0.020 0.20 0.50 Suggested Solder Pad Layout 0.031 0.800 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-3-12012020 1/4 MCCSEMI.COM 5 ,1 6285&(SI2305 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V Drain-Source Breakdown Voltage (BR)DSS V =0V, I =-250A V GS D -8 (Note 4) V V =V , I =-250A -0.55 -0.9 V GS(th) DS GS D Gate-Threshold Voltage I V = 8V, V =0V Gate-Body Leakage Current 0.1 A GSS GS DS I V =-8V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS V =-4.5V, I =-3.5A 45 GS D (Note 2) Drain-Source On-Resistance R DS(on) m V =-2.5V, I =-3.0A 60 GS D V =-1.8V, I =-2.0A 90 GS D (Note 2) V =-5V, I =-4.1A 6 Forward Tranconductance g S FS DS D Dynamic Characteristics (Note 3,4) C Input Capacitance 740 iss (Note 3,4) V =-4V,V =0V, f=1MHz Output Capacitance C pF DS GS 290 oss (Note 3,4) C Reverse Transfer Capacitance 190 rss (Note 3,4) R Gate Resistance 7 14 g f =1MHz 1.4 V =-4V,V =-4.5V,I =-4.1A 15 7.8 DS GS D (Note 3) Total Gate Charge Q g 4.5 9 (Note 3) V =-4V,V =-2.5V,I =-4.1A Gate-Source Chage Q gs DS GS D QC 1.2 (Note 3) Gage-Drain Charge Q gd 1.6 (Note 3,4) t Turn-On Delay Time d(on) 13 2 (Note 3,4) Turn-On Rise Time t 35 53 r V =-4V,V =-4.5V,I =-3.3A DD GEN D ns R =1.2,R =1 L GEN (Note 3,4) t 32 48 Turn-Off Delay Time d(off) (Note 3,4) Turn-Off Fall Time t 1 20 f (Note 3,4) t Turn-On Delay Time d(on) 5 1 (Note 3,4) Turn-On Rise Time t 11 17 r V =-4V,V =-8V,I =-3.3A D DD GEN ns R =1.2,R =1 (Note 3,4) L GEN t 22 33 Turn-Off Delay Time d(off) (Note 3,4) Turn-Off Fall Time t 16 24 f Drain-source body diode characteristics T =25 -1.4 Diode Forward Current C A I S (Note 2) A Diode Pulsed Forward Current -10 I SM (Note 4) V Diode Forward Voltage I =-3.3A -0.8 -1.2 V SD F Note: 2. Pulse Test: Pulse Width 300s,Duty Cycle 2%. 3. Guaranteed by Design, Not Subject to Production Testing. 4. These Parameters Have No Way to Verify. Rev.3-3-12012020 2/4 MCCSEMI.COM