M C C TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth MCQ4822 Features Halogen free available upon request by adding suffix-H N-Channel High power and current handing capability Lead free product is acquired Enhancement Mode Surface mount package Field Effect Transistor Moisture Sensitivity Level 1 Epoxy meets UL 94 V-0 flammability rating SOP-8 Mechanical Data Case: SOP-8, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Q4822 8 7 6 5 Maximum Ratings Operating Temperature: -55Cto+150C Storage Temperature: -55Cto+150C 1 2 3 4 o Thermal Resistance 89 C/W Junction To Ambient Parameter Symbol Value Unit A Drain-Source-Voltage V 30 V DSS B Gate-Source Voltage V 20 V GS F C Continuous Drain Current (t 10s) (note 1) I 8.5 A D Pulsed Drain Current (note 2) I 30 A DM DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE Power Dissipation 1.4 W A .053 .069 1.35 1.75 P D B .004 .010 0.10 0.25 C 0.050BSC 1.27BSC F .013 .020 0.33 0.51 D .189 .197 4.80 5.00 Equivalent circuit E .150 .157 3.80 4.00 H .228 .244 5.80 6.20 L .016 .050 0.40 1.27 www.mccsemi.com 1of 4 Revision: B 2016/10/10M C C TM Micro Commercial Components MCQ4822 Electrical characteristics (T =25 unless otherwise noted) a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250A 30 V Zero gate voltage drain current IDSS VDS =24V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage VGS(th) VDS =V , ID =250A 1 3 V GS VGS =10V, ID =8.5A 16 m Drain-source on-resistance (note 3) RDS(on) VGS =4.5V, ID =6A 26 m Forward tranconductance (note 3) g VDS =5V, ID =8.5A 20 S FS Diode forward voltage (note 3) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS(Note 4) Input capacitance C 1250 pF iss Output capacitance C VDS =15V,VGS =0V,f =1MHz 180 pF oss Reverse transfer capacitance C 110 pF rss SWITCHING PARAMETERS(Note 4) Turn-on delay time td(on) 7.5 ns Turn-on rise time tr V =10V,V =15V, 6.5 ns GS DS R =1.8,R =3 Turn-off delay time td(off) 25 ns L GEN Turn-off fall time tf 5 ns Total gate charge (10V) 23 nC Q g Total gate charge (4.5V) 11.2 nC VDS =15V,VGS =10V,ID =8.5A Gate-source charge Q 2.6 nC gs Gate-drain charge Q 4.2 nC gd Notes : 2 1. The value of R is measure with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with JA T =25. The value in any given application depends on the users specific board design. The current rating is based on a the t 10s thermal resistance rating. 2. Repetitive rating : Pulse width limited by junction temperature. 3. Pulse Test : Pulse Width300s, Duty Cycle2%. 4. Guaranteed by design, not subject to production testing. www.mccsemi.com 2 of 4 Revision: B 2016/10/10