MCQ4410 Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Enhancement Mode Compliant. See Ordering Information) Field Effect Transistor Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 89C/W Junction to Ambient SOP-8 Parameter Symbol Rating Unit B V D Drain -Source Voltage 30 V DS Gate -Source Voltage V 12 V GS A C I 7.5 A Drain Current-Continuous D (Note1) E AS 72 mJ Single Pulsed Avalanche Energy F E Pulsed Drain Current I 50 A DM K Power Dissipation P 1.4 D W Notes : H J 1.E condition: V =50V,L=0.5mH, R =25 , Starting T = 25C AS DD G J G Internal Structure DIMENSIONS INCHES MM DIM NOTE D D D D MIN MAX MIN MAX 8 7 6 5 A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. 4 1 2 3 H 0.228 0.244 5.80 6.20 Marking: Q4410 S S S G J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/4 MCCSEMI.COMMCQ4410 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 30 V (BR)DSS GS D (Note1) Gate-Threshold Voltage V V =V , I =250A V 1.0 1.3 3.0 GS(th) DS GS D I V = 12V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS Zero Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS 9.0 13.5 V =10V, I =10A GS D (Note1) Drain-Source On-Resistance R DS(on) m V =4.5V, I =5.0A 12 20 GS D (Note1) g V =15V, I =5.0A 8.0 Forward Transconductance S FS DS D (Note2) Dynamic Characteristics C Input Capacitance iss 9130 C V =15V,V =0V, f=1MHz pF 625 Output Capacitance oss DS GS Reverse Transfer Capacitance C 387 rss (Note2) Switching Characteristics t 15 d(on) Turn-On Delay Time V =25V,V =10V, I =1A , DD GS D t 15 ns r Turn-On Rise Time R =6,R =25 GEN L t 60 d(off) Turn-Off Delay Time Turn-Off Fall Time t 25 f 40 Total Gate Charge Q g V =15V,I =10A,V =10V DS D GS 5.5 nC Gate-Source Charge Q gs Gate-Drain Charge Q 3. 7 gd Source-Drain Diode characteristics (Note1) 1. 1 V Diode Forward voltage V =0V,I =2.3A V SD GS S 7.5 A I Drain-Source Diode Forward Current S 50 A Pulsed drain-source diode forward current I SM Notes: 1.Pulse Test: Pulse Width 300s, Duty Cycle 2%. 2.Guaranteed by design, not subject to production testing. Rev.3-2-12012020 2/4 MCCSEMI.COM