DMPH6050SPD 175C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Rated to +175C ideal for high ambient temperature I D BV R DSS DS(ON) Max environments T = +25C C 100% Unclamped Inductive Switching ensures more reliable -26A 48m V = -10V GS -60V and robust end application 60m V = -4.5V -23A GS Low R minimises power losses DS(ON) Low Qg minimises switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance An Automotive-Compliant Part is Available Under Separate (R ) and yet maintain superior switching performance, making it DS(ON) Datasheet (DMPH6050SPDQ) ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI5060-8 (Type C) Engine Management Systems Case Material: Molded Plastic,Gree Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D2 D1 S1 D1 G1 D1 G2 G1 S2 D2 D2 G2 S2 S1 Pin1 Equivalent Circuit Pin out Top View Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging DMPH6050SPD-13 PowerDI5060-8 (Type C) 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMPH6050SPD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -60 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C -6.3 A Continuous Drain Current (Note 6) V = -10V I A GS D State -4.4 T = +100C A T = +25C Steady C -26 A Continuous Drain Current (Note 7) V = -10V I GS D State -18 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -40 A I DM Maximum Continuous Body Diode Forward Current (Note 6) -2.0 A I S Avalanche Current (Note 8) L = 0.1mH I -21 A AS Avalanche Energy (Note 8) L = 0.1mH E 30 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.5 W A D Steady state 100 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 53 Total Power Dissipation (Note 6) T = +25C P 2.8 W A D Steady state 52 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 27 C/W Thermal Resistance, Junction to Case (Note 7) R 2.9 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -60 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current T = +25C I -1 A V = -60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(TH) DS GS D 36 48 V = -10V, I = -5A GS D Static Drain-Source On-Resistance R m DS(ON) 44 60 V = -4.5V, I = -4A GS D Diode Forward Voltage -0.7 -1.2 V V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1525 pF iss V = -30V, V = 0V, DS GS Output Capacitance C 90 pF oss f = 1.0MHz Reverse Transfer Capacitance C 70 pF rss 16 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 14.5 Total Gate Charge (V = -4.5V) Q nC GS g 30.6 nC Total Gate Charge (V = -10V) Q GS g V = -30V, I = -5A DS D Gate-Source Charge 4.9 nC Q gs Gate-Drain Charge 5.2 nC Q gd Turn-On Delay Time 5.3 ns t D(ON) Turn-On Rise Time 15.4 ns t V = -10V, V = -30V, R GS DS 79.2 Turn-Off Delay Time t ns R = 3, I = -5A D(OFF) G D 45.3 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time 15.2 ns I = -5A, di/dt = -100A/s t F RR Body Diode Reverse Recovery Charge 9.3 nC I = -5A, di/dt = -100A/s Q F RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. PowerDI is a registered trademark of Diodes Incorporated. 2 of 7 DMPH6050SPD September 2016 Diodes Incorporated www.diodes.com Document number: DS38680 Rev.1 - 2 NEW PRODUCT