BSC079N03LSC G OptiMOS3 Power-MOSFET Product Summary Features V 34 V DS Fast switching MOSFET for SMPS R 7.9 mW DS(on),max Optimized technology for DC/DC converters I 50 A D Improved switching behaviour PG-TDSON-8 1) Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC079N03LSC G PG-TDSON-8 079N03LS Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 50 A D GS C V =10 V, T =100C 32 GS C V =4.5 V, T =25C 39 GS C V =4.5 V, GS 25 T =100C C V =10 V, T =25C, GS A 14 2) R =50K/W thJA 3) I T =25C 200 Pulsed drain current D,pulse C 4) I T =25C 35 Avalanche current, single pulse AS C E I =30A, R =25W Avalanche energy, single pulse 10 mJ AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 Rev. 2.4 page 1 2013-05-21BSC079N03LSC G Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit P T =25C Power dissipation 30 W tot C T =25 C, A 2.5 2) R =50K/W thJA Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R bottom - - 4.1 K/W thJC top - - 20 2 2) R Device on PCB - - 50 thJA 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 34 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250A 1 - 2.2 GS(th) DS GS D V =30V, V =0V, DS GS I Zero gate voltage drain current - 0.1 1 A DSS T =25C j V =30V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5V, I =30A - 10.2 12.7 DS(on) GS D mW V =10V, I =30A - 6.6 7.9 GS D R Gate resistance - 3.0 - W G V >2 I R , DS D DS(on)max g Transconductance 28 55 - S fs I =30A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.4 page 2 2013-05-21