X-On Electronics has gained recognition as a prominent supplier of RQ3G150GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3G150GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3G150GNTB ROHM

RQ3G150GNTB electronic component of ROHM
RQ3G150GNTB ROHM
RQ3G150GNTB MOSFETs
RQ3G150GNTB  Semiconductors

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See Product Specifications
Part No. RQ3G150GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Nch 40V 30Aw Si MOSFET
Datasheet: RQ3G150GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6564 ea
Line Total: USD 1.66 
Availability - 2659
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2659
Ship by Thu. 10 Apr to Mon. 14 Apr
MOQ : 1
Multiples : 1
1 : USD 1.6564
10 : USD 0.9262
100 : USD 0.6586
500 : USD 0.583
1000 : USD 0.5373
3000 : USD 0.5054
6000 : USD 0.4958
24000 : USD 0.483

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RQ3G150GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3G150GNTB and other electronic components in the MOSFETs category and beyond.

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RQ3G150GN Datasheet Nch 40V 39A Middle Power MOSFET llOutline V 40V DSS R (Max.) 7.2m DS(on) HSMT8 I 39A D P 20W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 3000 DC/DC converter Taping code TB Marking G150GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 40 V DSS *1 T = 25C I 39 A c D Continuous drain current T = 25C I 15 A a D *2 I Pulsed drain current 60 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 15 A AS *3 E Avalanche energy, single pulse 17 mJ AS *1 P 20 W D Power dissipation *4 P 2 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.003 RQ3G150GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 6.2 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 40 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 26.2 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 40V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 100 nA GSS GS DS V Gate threshold voltage V = V , I = 1mA 1.2 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -4.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 15A - 5.1 7.2 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 15A - 6.4 8.9 GS D R Gate resistance f=1MHz, open drain - 1.4 - G Forward Transfer *5 Y V = 5V, I = 15A 16 - - S fs DS D Admittance *1Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 20V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) Limited only by maximum chamel temperaturer allowed. *5 Pulsed www.rohm.com 2/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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