X-On Electronics has gained recognition as a prominent supplier of RQ3L090GNTB MOSFETs across the USA, India, Europe, Australia, and various other global locations. RQ3L090GNTB MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RQ3L090GNTB ROHM

RQ3L090GNTB electronic component of ROHM
RQ3L090GNTB ROHM
RQ3L090GNTB MOSFETs
RQ3L090GNTB  Semiconductors

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See Product Specifications
Part No. RQ3L090GNTB
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET NCH 60V 30A POWER
Datasheet: RQ3L090GNTB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9515 ea
Line Total: USD 0.95 
Availability - 3641
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 1
Multiples : 1
1 : USD 1.8319
10 : USD 1.5309
30 : USD 1.3537
100 : USD 1.3295

3641
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.9515
10 : USD 0.9097
100 : USD 0.7073
500 : USD 0.6182
1000 : USD 0.6094
3000 : USD 0.5852

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RQ3L090GNTB from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ3L090GNTB and other electronic components in the MOSFETs category and beyond.

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RQ3L090GN Datasheet Nch 60V 30A Power MOSFET llOutline V 60V DSS R (Max.) 13.9m DS(on) HSMT8 I 30A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package 3) Pb-free lead plating RoHS compliant 4) 100% Rg and UIS tested 5) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 3000 Moter drives Taping code TB DC/DC converter Marking L090GN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 60 V DSS *1 T = 25C I 30 A c D Continuous drain current T = 25C I 9 A a D *2 I Pulsed drain current 36 A DP V Gate - Source voltage 20 V GSS *3 I Avalanche current, single pulse 9 A AS *3 E Avalanche energy, single pulse 12 mJ AS *1 P 20 W D Power dissipation *4 P 2.0 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/10 20181026 - Rev.002 RQ3L090GN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 R Thermal resistance, junction - case - - 6.2 /W thJC *4 R Thermal resistance, junction - ambient - - 62.5 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 60V, V = 0V - - 1 A DSS DS GS drain current Gate - Source leakage current I V = 20V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = V , I = 300A 1.3 - 2.7 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -5.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 9A - 10.3 13.9 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 9A - 14.6 21.4 GS D R Gate resistance f=1MHz, open drain - 0.7 - G Forward Transfer *5 Y V = 5V, I = 9A 9.5 - - S fs DS D Admittance *1 T = 25 , Limited only by maximum temperature allowed. c *2 Pw 10s, Duty cycle 1% *3 L 0.2mH, V = 30V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a Cu board (40400.8mm) *5 Pulsed www.rohm.com 2/10 20181026 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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