DMNH6021SPSQ Green 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature Environments I Max D BV R Max DSS DS(ON) 100% Unclamped Inductive Switching Ensures More Reliable T = +25C C and Robust End Application 23m V = 10V 55A GS High Conversion Efficiency 60V Low R Minimizes On-State Losses DS(ON) 28m V = 4.5V 48A GS Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Case: PowerDI5060-8 Driving Solenoids Case Material: Molded Plastic, Green Molding Compound. Driving Relays UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D S D D G Top View Pin Configuration Top View Bottom View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMNH6021SPSQ-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMNH6021SPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 55 C Continuous Drain Current, V = 10V (Note 8) I A GS D 39 T = +100C C Maximum Continuous Body Diode Forward Current (Note 8) 55 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 88 A I DM Avalanche Current, L = 0.1mH (Note 9) 35 A I AS Avalanche Energy, L = 0.1mH (Note 9) 64 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.6 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 96 C/W R JA Total Power Dissipation (Note 7) T = +25C P 3.0 W A D Thermal Resistance, Junction to Ambient (Note 7) Stead y State 50 C/W R JA Total Power Dissipation (Note 8) T = +25C P 53 W C D Thermal Resistance, Junction to Case (Note 8) 1.5 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage 60 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 60V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - 12 23 V = 10V, I = 12A GS D Static Drain-Source On-Resistance m R DS(ON) - 18 28 V = 4.5V, I = 12A GS D Diode Forward Voltage V - 0.75 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 11) 1,016 Input Capacitance C - - iss V = 30V, V = 0V, DS GS 153 Output Capacitance C - - pF oss f = 1MHz 76.8 Reverse Transfer Capacitance C - - rss 2.5 Gate Resistance R - - g VDS = 0V, VGS = 0V, f = 1MHz - 9.5 - Total Gate Charge (V = 4.5V) Q GS g - 19.7 - Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D Gate-Source Charge - 3.6 - Q gs Gate-Drain Charge - 4.8 - Q gd Turn-On Delay Time - 4.2 - t D(ON) 13 Turn-On Rise Time t - - V = 30V, V = 10V, R DD GS ns 27.5 Turn-Off Delay Time t - - I = 10A, R = 4.7 D(OFF) D g 15.3 Turn-Off Fall Time t - - F 20.8 Body Diode Reverse Recovery Time t - - ns RR I = 20A, di/dt = 100A/s F 13.9 Body Diode Reverse Recovery Charge Q - - nC RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMNH6021SPSQ June 2016 Diodes Incorporated www.diodes.com Document number: DS38394 Rev.4 - 2