Supertex inc. VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown The Supertex VN0550 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Low power drive requirement Supertexs well-proven silicon-gate manufacturing process. Ease of paralleling This combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input Excellent thermal stability impedance and positive temperature coefficient inherent Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this High input impedance and high gain device is free from thermal runaway and thermally-induced secondary breakdown. Applications Motor controls Supertexs vertical DMOS FETs are ideally suited to a wide Converters range of switching and amplifying applications where very Amplifiers low threshold voltage, high breakdown voltage, high input Switches impedance, low input capacitance, and fast switching speeds Power supply circuits are desired. Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VN0550 VN0550N3-G VN1550NW VN1550NJ VN1550ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF15 for layout and dimensions. Product Summary Pin Configuration R I DS(ON) D(ON) BV /BV DSS DGS (max) (min) (V) () (mA) 500 60 150 DRAIN SOURCE Absolute Maximum Ratings Parameter Value GATE Drain-to-source voltage BV DSS TO-92 (N3) Drain-to-gate voltage BV DGS Gate-to-source voltage 20V Product Marking Operating and storage temperature -55C to +150C SiVN YY = Year Sealed Absolute Maximum Ratings are those values beyond which damage to 0 550 WW = Week Sealed the device may occur. Functional operation under these conditions is not YYWW = Green Packaging implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN0550 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-92 50 250 1.0 125 170 50 250 Notes: I (continuous) is limited by max rated T . D j Electrical Characteristics (T = 25C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 2.0 - 4.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 -5.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - 1.0 mA O V = 0V, T = 125 C GS A - 100 - V = 5.0V, V = 25V GS DS I On-state drain current mA D(ON) 150 350 - V = 10V, V = 25V GS DS - 45 - V = 5.0V, I = 50mA Static drain-to-source on-state GS D R DS(ON) resistance - 40 60 V = 10V, I = 50mA GS D O R Change in R with temperature - 1.0 1.7 %/ C V = 10V, I = 50mA DS(ON) DS(ON) GS D G Forward transconductance 50 100 - mmho V = 25V, I = 50mA FS DS D C Input capacitance - 45 55 ISS V = 0V, GS C Common source output capacitance - 8.0 10 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 2.0 5.0 RSS t Turn-on time - - 10 d(ON) V = 25V, t Rise time - - 15 DD r ns I = 150mA, D t Turn-off time - - 10 d(OFF) R = 25 GEN t Fall time - 10 f V Diode forward voltage drop - 0.8 - V V = 0V, I = 500mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT Pulse Generator 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(OFF) f d(ON) r VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2