X-On Electronics has gained recognition as a prominent supplier of VN0808L-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. VN0808L-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VN0808L-G Microchip

VN0808L-G electronic component of Microchip
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Part No.VN0808L-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 80V; 1.5A; 1W; TO92
Datasheet: VN0808L-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3633 ea
Line Total: USD 1.36 
Availability - 322
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1727
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 25
Multiples : 25
25 : USD 1.7187
250 : USD 1.4887
500 : USD 1.3435
1000 : USD 1.3192
3000 : USD 1.295
5000 : USD 1.283
8000 : USD 1.2587
10000 : USD 1.2467

322
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 1.3633
25 : USD 1.1503
100 : USD 1.0587

89
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9655
5 : USD 1.7893
12 : USD 1.4233
25 : USD 1.4098
33 : USD 1.342

89
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 50
Multiples : 1
50 : USD 1.7799
100 : USD 1.6917

1721
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 50
Multiples : 25
50 : USD 2.3236
250 : USD 2.0127
500 : USD 1.8163
1000 : USD 1.7836
3000 : USD 1.7509

215
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 222
Multiples : 222
222 : USD 1.8931

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VN0808L-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VN0808L-G and other electronic components in the MOSFETs category and beyond.

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VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes Free from secondary breakdown a vertical DMOS structure and Supertexs well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power handling capabilities Low C and fast switching speeds ISS of bipolar transistors and the high input impedance and Excellent thermal stability positive temperature coefcient inherent in MOS devices. Integral source-drain diode Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary High input impedance and high gain breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Motor controls wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high Converters input impedance, low input capacitance, and fast switching Ampliers speeds are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package Option DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (A) VN0808 VN0808L-G 80 4.0 1.5 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN Absolute Maximum Ratings SOURCE Parameter Value GATE Drain-to-source voltage BV DSS TO-92 (L) Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 30V O O Operating and storage temperature -55 C to +150 C Si VN YY = Year Sealed O Soldering temperature* 300 C 0 8 0 8 L WW = Week Sealed YYWW Absolute Maximum Ratings are those values beyond which damage to the device = Green Packaging may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All Package may or may not include the following marks: Si or voltages are referenced to device ground. TO-92 (L) * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comVN0808 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C O O C ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 300 1.9 1.0 125 170 300 1.9 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 80 - - V V = 0V, I = 10A DSS GS D V Gate threshold voltage 0.8 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D I Gate body leakage - - 100 nA V = 15V, V = 0V GSS GS DS - - 10 V = 0V, V = 80V GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - 500 V = 0V, T = 125C GS A I On-state drain current 1.5 - - A V = 10V, V = 10V D(ON) GS DS R Static drain-to-source on-state resistance - - 4.0 V = 10V, I = 1.0A DS(ON) GS D G Forward transductance 170 - - mmho V = 10V, I = 500mA FS DS D C Input capacitance - - 50 ISS V = 0V, GS C Common source output capacitance - - 40 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 10 RSS V = 25V, t Turn-on delay time - - 10 DD (ON) ns I = 1.0A, D t Turn-off delay time - - 10 R = 25 (OFF) GEN V Diode forward voltage drop - 0.85 - V V = 0V, I = 350mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) d(OFF) r F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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