X-On Electronics has gained recognition as a prominent supplier of VN10KN3-G-P013 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VN10KN3-G-P013 MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VN10KN3-G-P013 Microchip

VN10KN3-G-P013 electronic component of Microchip
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Part No.VN10KN3-G-P013
Manufacturer: Microchip
Category: MOSFETs
Description: Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET
Datasheet: VN10KN3-G-P013 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7084 ea
Line Total: USD 0.71 
Availability - 1231
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1231
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7084
25 : USD 0.5865
100 : USD 0.5463

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the VN10KN3-G-P013 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VN10KN3-G-P013 and other electronic components in the MOSFETs category and beyond.

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Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdown vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power handling capabilities of bipolar transistors Low C and fast switching speeds ISS and the high input impedance and positive temperature Excellent thermal stability coefficient inherent in MOS devices. Characteristic of all Integral source-drain diode MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. High input impedance and high gain Supertexs vertical DMOS FETs are ideally suited to a wide Applications range of switching and amplifying applications where very Motor controls low threshold voltage, high breakdown voltage, high input Converters impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I Package DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-92 () (mA) VN10K VN10KN3-G 60 5.0 750 For packaged products, -G indicates package is RoHS compliant (Green). Consult factory for die / wafer form part numbers. Refer to Die Specification VF21 for layout and dimensions. Absolute Maximum Ratings Pin Configuration Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS DRAIN Gate-to-source voltage 30V SOURCE O O Operating and storage temperature -55 C to +150 C Absolute Maximum Ratings are those values beyond which damage to the device GATE may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All TO-92 (N3) voltages are referenced to device ground. Product Marking SiVN YY = Year Sealed 10K WW = Week Sealed YYWW = Green Packaging Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN10K Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 310 1.0 1.0 125 170 310 1.0 Notes: I (continuous) is limited by max rated T . (VN0106N3 can be used if an I (continuous) of 500mA is needed.) D j D O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.8 - 2.5 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 - mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 15V, V = 0V GSS GS DS - - 10 V = 0V, V = 45V GS DS I Zero gate voltage drain current A V = 0V, V = 45V, DSS GS DS - - 500 T = 125C A I On-state drain current 0.75 - - A V = 10V, V = 10V D(ON) GS DS - - 7.5 V = 5.0V, I = 200mA GS D R Static drain-to-source on-state resistance DS(ON) - - 5.0 V = 10V, I = 500mA GS D O R Change in R with temperature - 0.7 - %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho V = 10V, I = 500mA FS DS D C Input capacitance - 48 60 ISS V = 0V, GS C Common source output capacitance - 16 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 2.0 5.0 RSS V = 15V, t Turn-on time - - 10 DD (ON) ns I = 600mA, D t Turn-off time - - 10 R = 25 (OFF) GEN V Diode forward voltage drop - 0.8 - V V = 0V, I = 500mA SD GS SD t Reverse recovery time - 160 - ns V = 0V, I = 500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT Pulse Generator 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t r d(OFF) f d(ON) VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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