Supertex inc. VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power handling capabilities of bipolar transistors Low C and fast switching speeds ISS and the high input impedance and positive temperature Excellent thermal stability coefficient inherent in MOS devices. Characteristic of all Integral source-drain diode MOS structures, this device is free from thermal runaway and High input impedance and high gain thermally-induced secondary breakdown. Supertexs vertical DMOS FETs are ideally suited to a wide Applications range of switching and amplifying applications where very Motor controls low threshold voltage, high breakdown voltage, high input Converters impedance, low input capacitance, and fast switching speeds Amplifiers are desired. Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) VN0106 VN0106N3-G VN1506NW VN1506NJ VN1506ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF15 for layout and dimensions. Pin Configuration Product Summary R I DS(ON) D(ON) BV /BV DSS DGS (max) (min) (V) () (A) DRAIN 60 3.0 2.0 SOURCE Absolute Maximum Ratings GATE Parameter Value TO-92 (N3) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V SiVN O O YY = Year Sealed Operating and storage temperature -55 C to +150 C 0 106 WW = Week Sealed Absolute Maximum Ratings are those values beyond which damage to the device YYWW may occur. Functional operation under these conditions is not implied. Continuous = Green Packaging operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com VN0106 Thermal Characteristics I I Power Dissipation D D I I O jc ja DR DRM Package T = 25 C (continuous) (pulsed) C O O ( C/W) ( C/W) (mA) (A) (W) (mA) (A) TO-92 350 2.0 1.0 125 170 350 2.0 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 60 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 0.8 - 2.4 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - 100 V = 0V, T = 125C GS A 0.5 1.0 - V = 5.0V, V = 25V GS DS I On-state drain current A D(ON) 2.0 2.5 - V = 10V, V = 25V GS DS - 3.0 5.0 V = 5.0V, I = 250mA GS D R Static drain-to-source on-state resistance DS(ON) - 2.5 3.0 V = 10V, I = 1.0A GS D O R Change in R with temperature - 0.70 1.0 %/ C V = 10V, I = 1.0A DS(ON) DS(ON) GS D G Forward transductance 300 450 - mmho V = 25V, I = 500mA FS DS D C Input capacitance - 55 65 ISS V = 0V, GS C Common source output capacitance - 20 25 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 5.0 8.0 RSS t Turn-on delay time - 3.0 5.0 d(ON) V = 25V, t Rise time - 5.0 8.0 DD r ns I = 1.0A, D t Turn-off delay time - 6.0 9.0 d(OFF) R = 25 GEN t Fall time - 5.0 8.0 f V Diode forward voltage drop - 1.2 1.8 V V = 0V, I = 1.0A SD GS SD t Reverse recovery time - 400 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT Pulse Generator 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2