CPH6434 Ordering number : ENA0443 N-Channel Silicon MOSFET General-Purpose Switching Device CPH6434 Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 10 V GSS Drain Current (DC) I 6A D Drain Current (Pulse) I PW 10s, duty cycle 1% 24 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm 0.8mm) 1.6 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =3A 4.4 7.4 S DS D R (on)1 I =3A, V =4V 31 41 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1.5A, V =2.5V 40 57 m DS D GS R (on)3 I =0.3A, V =1.8V 55 90 m DS D GS Input Capacitance Ciss V =10V, f=1MHz 790 pF DS Output Capacitance Coss V =10V, f=1MHz 125 pF DS Reverse Transfer Capacitance Crss V =10V, f=1MHz 110 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 16.5 ns d Rise Time t See specified Test Circuit. 78 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 77 ns d Fall Time t See specified Test Circuit. 125 ns f Marking : ZL Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH6434/DCPH6434 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =10V, V =4V, I =6A 7.0 nC DS GS D Gate-to-Source Charge Qgs V =10V, V =4V, I =6A 1.8 nC DS GS D Gate-to-Drain Miller Charge Qgd V =10V, V =4V, I =6A 1.9 nC DS GS D Diode Forward Voltage V I =6A, V =0V 0.86 1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm 7018A-003 V =15V V IN DD 4V 2.9 0.15 0V I =3A D V IN 645 R =5 L D V OUT PW=10s 0.05 D.C.1% G 1 2 3 0.95 1 : Drain 0.4 CPH6434 P.G 50 2 : Drain S 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 I -- V I -- V D DS D GS 6 10 V =10V DS 9 5 8 7 4 6 5 3 4 2 3 2 1 1 0 0 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 Drain-to-Source Voltage, V -- V IT11180 Gate-to-Source Voltage, V -- V IT11181 DS GS R (on) -- V R (on) -- Ta DS GS DS 140 100 Ta=25C 120 80 1.5A 100 3.0A I =0.3A 60 D 80 60 40 40 20 20 0 0 0246 10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, V -- V Ambient Temperature, Ta -- C IT11241 IT11183 GS Rev.0 I Page 2 of 4 I www.onsemi.com V =1.5V GS I =3.0A, V =4.0V D GS I =1.5A, V =2.5V D GS I =0.3A, V =1.8V D GS 1.8V 2.0V Ta=75C 2.5V 25C --25C 4.0V 6.0V 8.0V Static Drain-to-Source 0.9 2.8 On-State Resistance, R (on) -- m Drain Current, I -- A DS D 0.2 0.6 1.6 0.6 0.2 Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D