CPH6445-TL-E ON Semiconductor

Ordering number : ENA1532B CPH6445 N-Channel Power MOSFET CPH6445 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 mA DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 mA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =1.5A 1.2 2.0 S DS D R (on)1 I =1.5A, V =10V 92 117 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =0.7A, V =4.5V 120 168 m DS D GS R (on)3 I =0.7A, V =4V 132 185 m DS D GS Input Capacitance Ciss 310 pF Output Capacitance Coss V =20V, f=1MHz 40 pF DS Reverse Transfer Capacitance Crss 25 pF Turn-ON Delay Time t (on) 6.0 ns d Rise Time t 5.5 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 27 ns d Fall Time t 13 ns f Total Gate Charge Qg 6.8 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =3.5A 1.1 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.4 nC Diode Forward Voltage V I =3.5A, V =0V 0.85 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V =30V V IN DD 10V 0V I =1.5A D V IN R =20 L D V OUT PW=10ms D.C.1% G CPH6445 P.G 50 S Ordering Information Device Package Shipping memo CPH6445-TL-E Pb-Free CPH6 3,000pcs./reel CPH6445-TL-W Pb-Free and Halogen Free No. A1532-2/5