P-CHANNEL ENHANCEMENT P-CHANNEL ENHANCEMENT ZVP2110C ZVP2110A MODE VERTICAL DMOS FET MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 ISSUE 2 MARCH 94 FEATURES FEATURES * 100 Volt V * 100 Volt V DS DS *R =8 *R =8 DS(on) DS(on) G D D G S S REFER TO ZVP2110A FOR GRAPHS E-Line E-Line TO92 Compatible TO92 Compatible ABSOLUTE MAXIMUM RATINGS. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V -100 V Drain-Source Voltage V -100 V DS DS Continuous Drain Current at T =25C I -230 mA Continuous Drain Current at T =25C I -230 mA amb D amb D Pulsed Drain Current I -3 A Pulsed Drain Current I -3 A DM DM Gate Source Voltage V 20 V Gate Source Voltage V 20 V GS GS Power Dissipation at T =25C P 700 mW Power Dissipation at T =25C P 700 mW amb tot amb tot Operating and Storage Temperature Range T :T -55 to +150 C Operating and Storage Temperature Range T :T -55 to +150 C j stg j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BV -100 V I =-1mA, V =0V Drain-Source Breakdown BV -100 V I =-1mA, V =0V DSS D GS DSS D GS Voltage Voltage Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS GS(th) DS GS Voltage Voltage Gate-Body Leakage I 20 nA V = 20V, V =0V Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS GSS GS DS Zero Gate Voltage Drain I -1 A V =-100 V, V =0 Zero Gate Voltage Drain I -1 A V =-100 V, V =0 DSS DS GS DSS DS GS Current -100 V =-80 V, V =0V, T=125C(2) A Current -100 A V =-80 V, V =0V, T=125C(2) DS GS DS GS On-State Drain Current(1) I -750 mA V =-25 V, V =-10V On-State Drain Current(1) I -750 mA V =-25 V, V =-10V D(on) DS GS D(on) DS GS Static Drain-Source On-State R 8 V =-10V,I =-375mA Static Drain-Source On-State R 8 V =-10V,I =-375mA DS(on) GS D DS(on) GS D Resistance (1) Resistance (1) Forward Transconductance g 125 mS V =-25V,I =-375mA Forward Transconductance g 125 mS V =-25V,I =-375mA fs DS D fs DS D (1)(2) (1)(2) Input Capacitance (2) C 100 pF Input Capacitance (2) C 100 pF iss iss Common Source Output C 35 pF V =-25V, V =0V, f=1MHz Common Source Output C 35 pF V =-25V, V =0V, f=1MHz oss DS GS oss DS GS Capacitance (2) Capacitance (2) Reverse Transfer C 10 pF Reverse Transfer C 10 pF rss rss Capacitance (2) Capacitance (2) Turn-On Delay Time (2)(3) t 7ns Turn-On Delay Time (2)(3) t 7ns d(on) d(on) Rise Time (2)(3) t 15 ns Rise Time (2)(3) t 15 ns r r V -25V, I =-375mA V -25V, I =-375mA DD D DD D Turn-Off Delay Time (2)(3) t 12 ns Turn-Off Delay Time (2)(3) t 12 ns d(off) d(off) Fall Time (2)(3) t 15 ns Fall Time (2)(3) t 15 ns f f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (2) Sample test. ( 3-424 3-421 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ID(On) - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On) Drain Current (Amps) ID(On) - Drain Current (Amps) gfs-Transconductance (mS) C-Capacitance (pF) VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) Gate Threshold Voltage VGS(th) ZVP2110A ZVP2110A TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS VGS= VGS= -1.6 -20V -1.6 -20V -16V -16V -1.4 -1.4 -12V 250 250 -12V -1.2 -10V -1.2 -10V -9V VDS=-10V 200 -1.0 200 -9V -1.0 -8V -8V -0.8 -0.8 150 150 VDS=-10V -7V -7V -0.6 -0.6 -6V 100 -6V 100 -0.4 -0.4 -5V -5V -4.5V 50 -0.2 50 -4V -0.2 -4.5V -4V -4V 0 -3.5V 0 -3.5V 0 0 0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) ID- Drain Current (Amps) Output Characteristics Saturation Characteristics Transconductance v drain current Transconductance v gate-source voltage 0 -8 -1.6 ID=- 0.5A 80 -2 -1.4 VDS= -4 -6 -50V -100V -1.2 -25V 60 VDS=-10V -6 -1.0 Ciss -8 -4 -0.8 40 -10 -0.6 ID= -0.5A -12 -2 -0.4 20 -0.25A Coss -14 -0.2 Crss -0.1A 0 -16 0 0 0 -20 -40 -60 -80 -100 00.5 1.0 1.5 2.0 2.5 3.0 0-2 -4 -6 -8 -10 0-2 -4 -6 -8 -10 VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Capacitance v drain-source voltage Gate charge v gate-source voltage Transfer Characteristics Voltage Saturation Characteristics 2.6 100 2.4 2.2 VGS=-4V VGS=-10V ID=-0.375A 2.0 1.8 -5V -7V 1.6 10 -10V 1.4 1.2 -20V VGS=VDS 1.0 ID=-1mA 0.8 1 0.6 10 100 1000 -40 -20 0 20 40 60 80 100 120 140 160 180C ID-Drain Current (mA) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-422 3-423 Drain-Source Resistance RDS(on) VDS-Drain Source Voltage (Volts) RDS(on)-Drain Source On Resistance ()