TM TrenchT2 V = 40V IXTA220N04T2 DSS I = 220A Power MOSFET IXTP220N04T2 D25 R 3.5m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C40 V DSS J V T = 25 C to 175 C, R = 1M 40 V DGR J GS V Transient 20 V GSM G D I T = 25 C 220 A D25 C S D (Tab) I External Lead Current Limit 120 A L(RMS) I T = 25 C, Pulse Width Limited by T 660 A DM C JM G = Gate D = Drain I T = 25 C 110 A S = Source Tab = Drain A C E T = 25 C 600 mJ AS C P T = 25 C 360 W D C Features T -55 ... +175 C J T 175 C JM International Standard Packages T -55 ... +175 C stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C Low Package Inductance L Fast Intrinsic Rectifier T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD 175C Operating Temperature F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C High Current Handling Capability M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d ROHS Compliant High Performance Trench Weight TO-263 2.5 g TO-220 3.0 g Technology for extremely low R DS(on) Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250 A 40 V DSS GS D Applications V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Automotive Engine Control I V = 20V, V = 0V 200 nA GSS GS DS Synchronous Buck Converter I V = V , V = 0V 5 A (for Notebook SystemPower & DSS DS DSS GS T = 150C 50 A General Purpose Point & Load) J DC/DC Converters R V = 10V, I = 50A, Notes 1 & 2 2.8 3.5 m DS(on) GS D High Current Switching Applications Power Train Management Distributed Power Architecture 2018 IXYS CORPORATION, All Rights Reserved DS99918D(7/18) IXTA220N04T2 IXTP220N04T2 Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 g V = 10V, I = 60A, Note 1 40 66 S L1 D1 fs DS D D 4 L2 H C 6820 pF A1 1 2 3 iss C V = 0V, V = 25V, f = 1MHz 1185 pF b2 b oss GS DS L3 e e c 0.43 11.0 C 250 pF rss 0 0.34 8.7 t 15 ns d(on) Resistive Switching Times 0.66 16.6 A2 t 21 ns r V = 10V, V = 20V, I = 50A 1 - Gate 0.20 5.0 60.12 3.0 GS DS D t 31 ns 2,4 - Drain d(off) R = 3.3 (External) 3 - Source G 0.10 2.5 0.06 1.6 t 21 ns f Q 112 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 33 nC gs GS DS DSS D DSS Q 30 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 220 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 660 A SM JM E A oP A1 V I = 50A, V = 0V, Note 1 1.1 V SD F GS H1 Q t 45 ns rr D2 D I = 110A, V = 0V, F GS I 1.8 A D1 RM -di/dt = 100A/s, V = 20V R E1 Q 32 nC RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 3X b2 1 - Gate 2. On through-hole packages, R Kelvin test contact DS(on) 2,4 - Drain 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537