X-On Electronics has gained recognition as a prominent supplier of CPH6635-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. CPH6635-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CPH6635-TL-H ON Semiconductor

CPH6635-TL-H electronic component of ON Semiconductor
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See Product Specifications
Part No.CPH6635-TL-H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NCH+PCH 1.8V DRIVE SERIES
Datasheet: CPH6635-TL-H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4741 ea
Line Total: USD 0.47 
Availability - 1927
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1927
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4741
10 : USD 0.4048
100 : USD 0.3069
500 : USD 0.2431
1000 : USD 0.2024
3000 : USD 0.1749
9000 : USD 0.165
24000 : USD 0.1628
45000 : USD 0.1595

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH6635-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH6635-TL-H and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA2166 CPH6635 Power MOSFET CPH6635 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max N-channel Drain to Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =100A 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =80mA 0.22 S DS D R (on)1 I =80mA, V =4V 2.9 3.7 DS D GS Static Drain to Source On-State Resistance R (on)2 I =40mA, V =2.5V 3.7 5.2 DS D GS R (on)3 I =10mA, V =1.5V 6.4 12.8 DS D GS Input Capacitance Ciss 7pF Output Capacitance Coss V =10V, f=1MHz 5.9 pF DS Reverse Transfer Capacitance Crss 2.3 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 65 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 155 ns d Fall Time t 120 ns f Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs V =10V, V =10V, I =150mA 0.26 nC DS GS D Gate to Drain Miller Charge Qgd 0.31 nC Diode Forward Voltage V I =150mA, V =0V 0.87 1.2 V SD S GS P-channel Drain to Source Breakdown Voltage V I =--1mA, V =0V --20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--20V, V =0V --1 A DSS DS GS Gate to Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --0.4 --1.4 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--800mA 1.9 S DS D R (on)1 I =--800mA, V =--4.5V 215 280 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =--400mA, V =--2.5V 310 434 m DS D GS R (on)3 I =--200mA, V =--1.8V 450 675 m DS D GS Input Capacitance Ciss 120 pF Output Capacitance Coss V =--10V, f=1MHz 26 pF DS Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time t (on) 5.3 ns d Rise Time t 9.7 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 16 ns d Fall Time t 14 ns f Total Gate Charge Qg 1.7 nC Gate to Source Charge Qgs V =--10V, V =--4V, I =--1.5A 0.28 nC DS GS D Gate to Drain Miller Charge Qgd 0.47 nC Diode Forward Voltage V I =--1.5A, V =0V --0.9 --1.5 V SD S GS No.8987-2/8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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