STQ2LN60K3-AP STMicroelectronics

STQ2LN60K3-AP N-channel 600 V, 4 typ., 0.6 A MDmesh K3 Power MOSFET in a TO-92 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT max 2.5 W STQ2LN60K3-AP 600 V 4.5 0.6 A 3 100% avalanche tested 2 Extremely high dv/dt capability 1 Very low intrinsic capacitance Improved diode reverse recovery TO-92 ammopack characteristics Zener-protected Figure 1: Internal schematic diagram Applications D(2) Switching applications Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics G(1) MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. S(3) AM15572v1 no tab Table 1: Device summary Order code Marking Package Packaging STQ2LN60K3-AP 2LN60K3 TO-92 Ammopack February 2017 DocID023499 Rev 3 1/13 www.st.com This is information on a product in full production. Contents STQ2LN60K3-AP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-92 ammopack package information .......................................... 10 5 Revision history ............................................................................ 12 2/13 DocID023499 Rev 3