STR1P2UH7 STMicroelectronics

STR1P2UH7 P-channel 20 V, 0.087 typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code V R max I DS DS(on) D STR1P2UH7 20 V 0.1 4.5 1.4 A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Switching applications Figure 1: Internal schematic diagram Description This P-channel Power MOSFET utilizes the D (3) STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. G (1) S (2) Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. June 2015 DocID025025 Rev 3 1/12 www.st.com This is information on a product in full production. Contents STR1P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 SOT-23 package mechanical data .................................................... 9 5 Revision history ............................................................................ 11 2/12 DocID025025 Rev 3