STS1DNC45 DUAL N-CHANNEL 450V - 4.1 -0.4A SO-8 SuperMESH POWER MOSFET TYPE V R I DSS DS(on) D STS1DNC45 450 V < 4.5 0.4 A TYPICAL R (on) = 4.1 DS STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE CHARGE MINIMIZED SO-8 DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is tak- INTERNAL SCHEMATIC DIAGRAM en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) DC-DC CONVERTERS LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V =0) 450 V DS GS V Drain-gate Voltage (R =20k) 450 V DGR GS V GS Gate- source Voltage 30 V I Drain Current (continuous) at T = 25C 0.40 A D C 0.25 A Drain Current (continuous) at T = 100C C I ( ) Drain Current (pulsed) 1.6 A DM P Total Dissipation at T = 25C Dual Operation TOT C 1.6 W Total Dissipation at T = 25C Single Operation 2 W C dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns ( ) Pulse width limited by safe operating area (1)I 0.4 A, di/dt 100A/s, V V ,T T SD DD (BR)DSS j JMAX. June 2003 1/8STS1DNC45 THERMAL DATA Rthj-amb( ) Thermal Resistance Junction-ambient Max Single Operation 62.5 C/W Thermal Resistance Junction-ambient Max Dual Operation 78 C/W T Max. Operating Junction Temperature 150 C j T Storage Temperature 65 to 150 C stg ( ) When Mounted on FR4 board (Steady State) AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 0.4 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 30 mJ AS (starting T = 25 C, I =I ,V =50V) j D AR DD ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source I = 250 A, V = 0 450 V (BR)DSS D GS Breakdown Voltage I Zero Gate Voltage V = Max Rating 1A DSS DS Drain Current (V =0) GS V = Max Rating, T = 125 C 50 A DS C I Gate-body Leakage V = 30V 100 nA GSS GS Current (V =0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I = 250A 2.3 3 3.7 V GS(th) DS GS D R Static Drain-source On V =10 V,I = 0.5 A DS(on) GS D 4.1 4.5 Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V =25V I = 0.5 A 1.1 S fs DS , D C V =25V,f= 1MHz, V =0 Input Capacitance 160 pF iss DS GS C Output Capacitance 27.5 pF oss C Reverse Transfer 4.7 pF rss Capacitance 2/8