STS4DPF30L STMicroelectronics

STS4DPF30L DUAL P-CHANNEL 30V - 0.07 - 4A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STS4DPF30L 30 V <0.08 4 A TYPICAL R (on) = 0.07 DS STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis uniqueSingle Feature Siz SO-8 strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT POWER MANAGEMENT IN CELLULAR PHONES DC-DC CONVERTER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 30 V DS GS V Drain-gate Voltage (R = 20 k) 30 V DGR GS V Gate- source Voltage 16 V GS Drain Current (continuous) at T = 25C Single Operation 4 A C I D Drain Current (continuous) at T = 100C Single Operation 2.5 A C I () Drain Current (pulsed) 16 A DM Total Dissipation at T = 25C Dual Operation 2.0 W C P tot Total Dissipation at T = 25C Single Operation 1.6 W C () Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed April 2002 1/6 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.STS4DPF30L THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation 78 C/W Dual Operating 62.5 C/W T Thermal Operating Junction-ambient -55 to150 C j T Storage Temperature -55 to 150 C stg (*) 2 When Mounted on 1 inch FR-4 board, 2 oz of Cu and t 10 sec. ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source I = 250 A, V = 0 30 V V D GS (BR)DSS Breakdown Voltage V = Max Rating Zero Gate Voltage 1 A I DS DSS Drain Current (V = 0) V = Max Rating T = 125C 10 A GS DS C Gate-body Leakage V = 16 V 100 nA I GS GSS Current (V = 0) DS (*) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V I = 250 A1V GS(th) DS GS D Static Drain-source On V = 10 V I = 2 A 0.070 0.08 R GS D DS(on) Resistance V = 4.5 V I = 2 A 0.085 0.10 GS D DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit (*) g Forward Transconductance V = 15V I =2 A 10 S DS D fs C Input Capacitance V = 25V, f = 1 MHz, V = 0 1350 pF iss DS GS Output Capacitance 490 pF C oss Reverse Transfer 130 pF C rs s Capacitance 2/6