STS10P3LLH6 Datasheet P-channel -30 V, 10 m typ., -12.5 A, STripFET H6 Power MOSFET in an SO-8 package 5 Features 8 V R max. I Order code DS DS(on) D STS10P3LLH6 -30 V 12 m -12.5 A 4 1 Very low on-resistance Very low gate charge SO-8 High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET H6 S(1, 2, 3) technology with a new trench gate structure. The resulting Power MOSFET exhibits AM01475v4 very low R in all packages. DS(on) Product status link STS10P3LLH6 Product summary Order code STS10P3LLH6 Marking 10K3L Package SO-8 Packing Tape and reel DS10150 - Rev 7 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STS10P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage -30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C -12.5 amb I A D Drain current (continuous) at T = 100 C -7.8 amb (1) I Drain current (pulsed) -50 A DM P Total power dissipation at T = 25 C 2.7 W TOT amb E Single pulse avalanche energy (starting T = 25 C, I = -5 A) 70 mJ AS J D T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance junction-amb 47 C/W thj-amb 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t 10 s. DS10150 - Rev 7 page 2/13