STS14N3LLH5 STMicroelectronics

STS14N3LLH5 N-channel 30 V, 0.005 , 14 A, SO-8 STripFET V Power MOSFET Features Type V R I DSS DS(on) D (1) STS14N3LLH5 30 V <0.006 14 A 1. The value is rated according R thj-pcb R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) SO-8 Very low switching gate charge High avalanche ruggedness Low gate drive power losses Application Switching applications Figure 1. Internal schematic diagram Description th This product utilizes the 5 generation of design rules of STs proprietary STripFET technology. The lowest available R *Q , in SO-8 DS(on) g package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STS14N3LLH5 14D3L SO-8 Tape and reel November 2009 Doc ID 14166 Rev 4 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s)Contents STS14N3LLH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 14166 Rev 4 Obsolete Product(s) - Obsolete Product(s)