STS20N3LLH6 STMicroelectronics

STS20N3LLH6 N-channel 30 V, 0.004 , 20 A, SO-8 STripFET VI DeepGATE Power MOSFET Features R DS(on) Type V I DSS D max STS20N3LLH6 30 V 0.0047 20 A R * Q industry benchmark DS(on) g Extremely low on-resistance R DS(on) High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Application Switching applications Figure 1. Internal schematic diagram Description th This product utilizes the 6 generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. Table 1. Device summary Order code Marking Package Packaging STS20N3LLH6 20G3L SO-8 Tape and reel March 2010 Doc ID 15528 Rev 2 1/13 www.st.com 13 Obsolete Product(s) - Obsolete Product(s)Contents STS20N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 15528 Rev 2 Obsolete Product(s) - Obsolete Product(s)