X-On Electronics has gained recognition as a prominent supplier of STS26N3LLH6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STS26N3LLH6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STS26N3LLH6 STMicroelectronics

STS26N3LLH6 electronic component of STMicroelectronics
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Part No.STS26N3LLH6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG
Datasheet: STS26N3LLH6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 2500
Multiples : 2500
2500 : USD 0.9888
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Obsolete
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MOQ : 2500
Multiples : 2500
2500 : USD 1.0212
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Obsolete
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Multiples : 2500
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MOQ : 1
Multiples : 1
1 : USD 5.7995
10 : USD 1.9677
100 : USD 1.5327
500 : USD 1.2945
1000 : USD 1.0874
5000 : USD 1.0066
10000 : USD 0.9672
25000 : USD 0.9445
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Obsolete
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MOQ : 94
Multiples : 1
94 : USD 0.8865
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Obsolete
   
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We are delighted to provide the STS26N3LLH6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STS26N3LLH6 and other electronic components in the MOSFETs category and beyond.

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STS26N3LLH6 N-channel 30 V, 0.0038 , 26 A, SO-8 STripFET VI DeepGATE Power MOSFET Features R DS(on) Type V I DSS D max 5 6 7 8 STS26N3LLH6 30 V 0.0044 26 A R * Q industry benchmark DS(on) g 4 3 2 Extremely low on-resistance R 1 DS(on) High avalanche ruggedness SO-8 Low gate drive power losses Very low switching gate charge Applications Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of STs proprietary STripFET technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest R in all DS(on) packages. Table 1. Device summary Order code Marking Packag Packaging STS26N3LLH6 26G3L SO-8 Tape and reel October 2011 Doc ID 019030 Rev 2 1/14 www.st.com 14Contents STS26N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data 10 5 Revision history . 13 2/14 Doc ID 019030 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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