STU11N65M2 STMicroelectronics

STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in DPAK, TO-220 and IPAK packages Features TAB TAB 3 V R max. I P Order code Package DS DS(on) D TOT 1 DPAK STD11N65M2 DPAK 3 2 TO-220 TAB 1 STP11N65M2 650 V 0.68 7 A 85 W TO-220 STU11N65M2 IPAK 3 2 IPAK 1 Extremely low gate charge Excellent output capacitance (C ) profile OSS D(2, TAB) 100% avalanche tested Zener-protected Applications G(1) Switching applications Description S(3) These devices are N-channel Power MOSFETs developed using the MDmesh M2 NG1D2TS3Z technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD11N65M2 STP11N65M2 STU11N65M2 DS10348 - Rev 6 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STD11N65M2, STP11N65M2, STU11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 7 case I A D Drain current (continuous) at T = 100 C 4.4 case (1) I Drain current (pulsed) 28 A DM P Total power dissipation at T = 25 C 85 W TOT case (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width limited by T . jmax 2. I 7 A, di/dt 400 A/s, V (peak) V , V = 400 V SD DS (BR)DSS DS 3. V 520 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 1.47 thj-case R Thermal resistance junction-ambient 62.5 100 thj-amb C/W (1) R Thermal resistance junction-pcb 50 thj-pcb 1. When mounted on a 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 1.5 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T . jmax 2. starting T = 25 C, I = I , V = 50 V. j D AR DD DS10348 - Rev 6 page 2/27