STU60N3LH5 STMicroelectronics

STU60N3LH5 N-channel 30 V, 0.0076 typ., 48 A STripFET H5 Power MOSFET in an IPAK package Datasheet - production data Features Order code V T R max. I DS jmax DS(on) D TAB STU60N3LH5 35 V 0.0084 48 A Low on-resistance RDS(on) 3 2 High avalanche ruggedness 1 Low gate drive power loss IPAK Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET D(2, TAB) H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. G(1) S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STU60N3LH5 60N3LH5 IPAK Tube June 2016 DocID025133 Rev 1 1/12 www.st.com This is information on a product in full production. Obsolete Product(s) - Obsolete Product(s)Contents STU60N3LH5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK package information ................................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID025133 Rev 1 Obsolete Product(s) - Obsolete Product(s)