STB33N60DM2, STP33N60DM2, STW33N60DM2 Datasheet N-channel 600 V, 110 m typ., 24 A MDmesh DM2 Power MOSFET in DPAK, TO220 and TO247 packages TAB Features V T R max. I Order code DS Jmax. DS(on) D 3 1 STB33N60DM2 2 D PAK TAB STP33N60DM2 650 V 130 m 24 A STW33N60DM2 Fast-recovery body diode 3 3 2 TO-220 2 TO-247 1 1 Extremely low gate charge and input capacitance Low on-resistance D(2, TAB) 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) AM01476v1 tab Description These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Q ) and time (t ) rr rr combined with low R , rendering them suitable for the most demanding high DS(on) efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STB33N60DM2 STP33N60DM2 STW33N60DM2 DS10564 - Rev 3 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.STB33N60DM2, STP33N60DM2, STW33N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Gate-source voltage (static) 25 V V GS Gate-source voltage (dynamic AC, f > 1 Hz) 30 Drain current (continuous) at T = 25 C 24 case I A D Drain current (continuous) at T = 100 C 15.5 case (1) I Drain current (pulsed) 96 A DM P Total power dissipation at T = 25 C TOT case 190 W (2) Peak diode recovery voltage slope 100 V/ns dv/dt (2) di/dt Peak diode recovery current slope 1000 A/s (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 24 A, V peak < V , V = 400 V. SD DS (BR)DSS DD 3. V 480 V. DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 TO-247 R Thermal resistance junction-case 0.66 thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb R Thermal resistance junction-ambient 62.5 50 thj-amb 1. When mounted on 1 inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (Pulse width limited by T ) 5.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 570 mJ AS j D AR DD DS10564 - Rev 3 page 2/20