X-On Electronics has gained recognition as a prominent supplier of STW68N60M6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW68N60M6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW68N60M6 STMicroelectronics

STW68N60M6 electronic component of STMicroelectronics
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Part No.STW68N60M6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET PTD HIGH VOLTAGE
Datasheet: STW68N60M6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.8278 ea
Line Total: USD 15.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 6.0891

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 15.8278
5 : USD 12.5225
10 : USD 9.8034
50 : USD 9.2453
100 : USD 9.0562
250 : USD 8.8672

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 600
Multiples : 600
600 : USD 8.5484

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 12.6647
10 : USD 11.1743

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 600
1 : USD 18.5483
2 : USD 12.1769
3 : USD 12.1637
4 : USD 11.5055

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 2
Multiples : 1
2 : USD 6.0891

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 30
Multiples : 30
30 : USD 5.3307
3000 : USD 5.0152

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the STW68N60M6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW68N60M6 and other electronic components in the MOSFETs category and beyond.

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STW68N60M6 Datasheet N-channel 600 V, 35 m typ., 63 A MDmesh M6 Power MOSFET in a TO-247 package Features V R max. I Order code DS DS(on) D STW68N60M6 600 V 41 m 63 A Reduced switching losses 3 2 Lower R per area vs previous generation DS(on) 1 Low gate input resistance TO-247 100% avalanche tested Zener-protected D(2, TAB) Applications Switching applications G(1) LLC converters Boost PFC converters S(3) AM01475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Maturity status link STW68N60M6 Device summary Order code STW68N60M6 Marking 68N60M6 Package TO-247 Packing Tube DS12066 - Rev 2 - November 2018 www.st.com/Power Transistors For further information contact your local STMicroelectronics sales office.STW68N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 63 A C I D Drain current (continuous) at T = 100 C 40 A C (1) I Drain current (pulsed) 252 A DM P Total power dissipation at T = 25 C 390 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 63 A, di/dt 400 A/s, V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.32 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 7.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 1100 mJ AS j D AR DD DS12066 - Rev 2 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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