STW34NM60N STMicroelectronics

STW34NM60N N-channel 600 V, 0.092 typ., 31.5 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code V R I P DSS DS(on) D TOT STW34NM60N 600 V 0.105 31.5 A 250 W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications 2 7 Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of % 7 MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order codes Marking Packages Packaging STW34NM60N 34NM60N TO-247 Tube March 2015 DocID027675 Rev 2 1/12 This is information on a product in full production. www.st.com 12Contents STW34NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 4.1 TO-247 package information . 9 5 Revision history . 11 2/12 DocID027675 Rev 2