STW30NM60ND STMicroelectronics

STx30NM60ND N-channel 600 V, 0.11 , 25 A FDmesh II Power MOSFET 2 2 (with fast diode) TO-220, TO-220FP, D PAK, I PAK, TO-247 Features V T R DSS J DS(on) Type I D max max 3 3 2 2 2 STB30NM60ND 25 A I PAK 1 1 TO-247 STI30NM60ND 25 A (1) STF30NM60ND 650 V 0.13 25 A 3 STP30NM60ND 25 A 1 2 D PAK STW30NM60ND 25 A 1. Limited only by maximum temperature allowed 3 2 3 The worlds best R in TO-220 amongst 1 TO-220 DS(on) 2 1 TO-220FP the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance Extremely high dv/dt and avalanche capabilities Application Switching applications Description The FDmesh II series belongs to the second 3 generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company s strip layout - V and associates all advantages of reduced on- It is therefore strongly recommended for bridge resistance and fast switching with an intrinsic fast- topologies, in particular ZVS phase-shift recovery body diode. converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60ND 30NM60ND DPAK Tape and reel STI30NM60ND 30NM60ND IPAK Tube STF30NM60ND 30NM60ND TO-220FP Tube STP30NM60ND 30NM60ND TO-220 Tube STW30NM60ND 30NM60ND TO-247 Tube November 2008 Rev 2 1/18 www.st.com 18 Obsolete Product(s) - Obsolete Product(s)Contents STx30NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packing mechanical data 16 6 Revision history . 17 2/18 Obsolete Product(s) - Obsolete Product(s)