STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 , 25 A, MDmesh II Power MOSFET 2 2 TO-220, TO-220FP, TO-247, D PAK, I PAK Features R V DS(on) DSS Type I P D W T max Jmax 3 3 1 2 1 STB30NM60N 650 V <0.13 25A 190 W DPAK IPAK STI30NM60N 650 V <0.13 25A 190 W 3 2 (1) 1 STF30NM60N 650 V <0.13 25A 40 W TO-247 STP30NM60N 650 V <0.13 25A 190 W STW30NM60N 650 V <0.13 25A 190 W 3 1. Limited only by maximum temperature allowed 3 2 2 1 1 100% avalanche tested TO-220 TO-220FP Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Application Switching applications Description This series of devices is designed using the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on- resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM60N 30NM60N DPAK Tape and reel STI30NM60N 30NM60N IPAK Tube STF30NM60N 30NM60N TO-220FP Tube STP30NM60N 30NM60N TO-220 Tube STW30NM60N 30NM60N TO-247 Tube July 2008 Rev 2 1/18 www.st.com 18 Obsolete Product(s) - Obsolete Product(s)Contents STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data . 16 6 Revision history . 17 2/18 Obsolete Product(s) - Obsolete Product(s)