X-On Electronics has gained recognition as a prominent supplier of STW32N65M5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW32N65M5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW32N65M5 STMicroelectronics

STW32N65M5 electronic component of STMicroelectronics
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Part No.STW32N65M5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET POWER MOSFET N-CH 650V 24 A
Datasheet: STW32N65M5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.7416 ea
Line Total: USD 11.74 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 11.7416
10 : USD 10.1826
100 : USD 8.4307
500 : USD 7.3413

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STW32N65M5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW32N65M5 and other electronic components in the MOSFETs category and beyond.

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STB32N65M5 Datasheet N-channel 650 V, 95 m typ., 24 A MDmesh M5 Power MOSFET in DPAK package Features TAB V at T R max. I Order codes DS jmax. DS(on) D STB32N65M5 710 V 119 m 24 A 2 3 Extremely low R DS(on) 1 Low gate charge and input capacitance Excellent switching performance DPAK 100% avalanche tested D(2, TAB) Applications Switching applications Description G(1) This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly S(3) suitable for applications requiring high power and superior efficiency. AM01475v1 noZen Product status link STB32N65M5 Product summary Order code STB32N65M5 Marking 32N65M5 2 Package D PAK Packing Tape and reel DS6032 - Rev 5 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB32N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 24 A D C I Drain current (continuous) at T = 100 C 15 A D C (1) I Drain current (pulsed) 96 A DM P Total power dissipation at T = 25 C 150 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 24 A, di/dt 400 A/s, V V . SD DS(peak) (BR)DSS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.83 C/W thj-case (1) R Thermal resistance junction-pcb 30 C/W thj-pcb 1. When mounted on FR-4 board of 1 inch, 2oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not-repetitive (pulse width limited by T Max) 8 A AR j E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 650 mJ AS j D AR DD DS6032 - Rev 5 page 2/17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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