X-On Electronics has gained recognition as a prominent supplier of STW33N60M2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW33N60M2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW33N60M2 STMicroelectronics

STW33N60M2 electronic component of STMicroelectronics
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Part No.STW33N60M2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 190W; TO247
Datasheet: STW33N60M2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1697 ea
Line Total: USD 2.17 
Availability - 3629
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3629
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 2.1697
10 : USD 1.8834
30 : USD 1.7041
100 : USD 1.5209
500 : USD 1.4389
1000 : USD 1.4025

   
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We are delighted to provide the STW33N60M2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW33N60M2 and other electronic components in the MOSFETs category and beyond.

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STF33N60M2, STI33N60M2 STP33N60M2, STW33N60M2 Datasheet N-channel 600 V, 0.108 typ., 26 A, MDmesh M2 Power MOSFETs 2 in TO220FP, I PAK, TO-220 and TO-247 packages TAB Features V T R max. I Order codes Package DS Jmax DS(on) D 3 2 3 1 STF33N60M2 TO-220FP 2 1 2 TO-220FP I PAK STI33N60M2 IPAK 650 V 0.125 26 A TAB STP33N60M2 TO-220 STW33N60M2 TO-247 3 Extremely low gate charge 2 1 Excellent output capacitance (C ) profile TO-220 TO-247 OSS 100% avalanche tested ( ) D 2, TAB Zener-protected Applications G ( 1 ) Switching applications LLC converters, resonant converters S ( 3 ) AM15572V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status links STF33N60M2 STI33N60M2 STP33N60M2 STW33N60M2 DS9497 - Rev 3 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 I PAK, TO-220, TO-220FP TO-247 V Gate-source voltage 25 V GS (1) Drain current (continuous) at T = 25 C 26 26 A C I D (1) Drain current (continuous) at T = 100 C 16 16 A C (2) (1) I Drain current (pulsed) 104 104 A DM P Total power dissipation at T = 25 C 35 190 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three V leads to external heat sink 2500 V ISO (t = 1 s, T = 25 C) C T Storage temperature range stg -50 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. I 26 A, di/dt 400 A/s, V < V , V = 400 V SD DS peak (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Value 2 Symbol Parameter Unit I PAK TO-220FP TO-247 TO-220 R Thermal resistance junction-case 3.6 0.66 C/W thj-case R Thermal resistance junction-ambient 62.5 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 450 mJ AS j D AR DD DS9497 - Rev 3 page 2/20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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