X-On Electronics has gained recognition as a prominent supplier of STW28NM60ND MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW28NM60ND MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW28NM60ND STMicroelectronics

STW28NM60ND electronic component of STMicroelectronics
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Part No.STW28NM60ND
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 14.5A; 190W; TO247
Datasheet: STW28NM60ND Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.8324 ea
Line Total: USD 3.83 
Availability - 516
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
516
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 3.8324

516
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 3.8324

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STW28NM60ND from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW28NM60ND and other electronic components in the MOSFETs category and beyond.

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STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 typ., 23 A FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB V DS 2 Order codes R I DS(on) max D 3 T J max. 1 3 2 1 2 STB28NM60ND D PAK TO-220FP STF28NM60ND TAB 650 V 0.150 23 A STP28NM60ND STW28NM60ND 3 33 2 22 1 11 Intrinsic fast-recovery body diode TO-220 TO-247 100% avalanche tested Low input capacitance and gate charge Figure 1. Internal schematic diagram Low gate input resistance Extremely high dv/dt and avalanche capabilities % 7 Applications Switching applications * Description These FDmesh II Power MOSFETs with 6 intrinsic fast-recovery body diode are produced using the second generation of MDmesh technology. Utilizing a new strip-layout vertical 0 Y structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Packages Packaging 2 STB28NM60ND D PAK Tape and reel STF28NM60ND TO-220FP 28NM60ND STP28NM60ND TO-220 Tube STW28NM60ND TO-247 May 2014 DocID024520 Rev 3 1/22 This is information on a product in full production. www.st.com 22Contents STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 2 4.1 D PAK, STB28NM60ND 11 4.2 TO-220FP, STF28NM60ND . 13 4.3 TO-220, STP28NM60ND . 15 4.4 TO-247, STW28NM60ND 17 5 Packing mechanical data 19 6 Revision history . 21 2/22 DocID024520 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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