STW18NM60ND STMicroelectronics

STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET 2 (with fast diode) in D PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB V R DSS DS(on) I Order codes D 3 T max Jmax 1 3 2 2 D PAK 1 STB18NM60ND TO-220FP STF18NM60ND 650 V <0.29 13 A STP18NM60ND TAB STW18NM60ND The worldwide best R * area amongst the DS(on) fast recovery diode devices 3 3 2 2 100% avalanche tested 1 1 TO-220 TO-247 Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities % 7 Applications Switching applications * Description These FDmesh II Power MOSFETs with intrinsic fast-recovery body diode are produced 6 using the second generation of MDmesh technology. Utilizing a new strip-layout vertical 0 Y structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging 2 STB18NM60ND Tape and reel D PAK STF18NM60ND TO-220FP 18NM60ND STP18NM60ND TO-220 Tube STW18NM60ND TO-247 May 2013 DocID024653 Rev 1 1/22 This is information on a product in full production. www.st.com 22Contents STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 19 6 Revision history . 21 2/22 DocID024653 Rev 1