STW34NB20 STMicroelectronics

STW34NB20 N-CHANNEL 200V - 0.062 - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V R I DSS DS(on) D STW34NB20 200 V < 0.075 34 A FEATURES SUMMARY TYPICAL R = 0.062 DS(on) EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 2 1 VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstand- Figure 2. Internal Schematic Diagram ing performances. The new patent pending strip layout coupled with the Companys proprietary edge termination structure, gives the lowest R per area, exceptional avalanche and dv/dt DS(on) capabilities and unrivalled gate charge and switch- ing characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE HIGH CURRENT, HIGH SPEED SWITCHING Table 2. Order Codes Part Number Marking Package Packaging STW34NB20 W34NB20 TO-247 TUBE REV. 2 April 2004 1/10 Obsolete Product(s) - Obsolete Product(s)STW34NB20 Table 3. Absolute Maximum Ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 200 V DS GS V Drain- gate Voltage (R = 20 k) 200 V DGR GS V Gate-source Voltage 30 V GS I Drain Current (cont.) at T = 25 C 34 A D C I Drain Current (cont.) at T = 100 C 21 A D C (1) Drain Current (pulsed) 136 A I DM P Total Dissipation at T = 25 C 180 W tot C Derating Factor 1.44 W/C T Storage Temperature -65 to 150 C stg T Max. Operating Junction Temperature 150 C j Note: 1. Pulse width limited by safe operating area Table 4. Thermal Data Symbol Parameter Value Unit R Thermal Resistance Junction-case Max 0.69 C/W thj-case R Thermal Resistance Junction-ambient Max 30 C/W thj-amb T Maximum Lead Temperature For Soldering Purpose 300 C l Table 5. Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 34 A AR (pulse width limited by T max, < 1%) j E Single Pulse Avalanche Energy 650 mJ AS (starting T = 25 C I = I V = 50 V) j D AR DD 2/10 Obsolete Product(s) - Obsolete Product(s)