STW48N60DM2 STMicroelectronics

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3 capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness TO-247 Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STW48N60DM2 48N60DM2 TO-247 Tube October 2015 DocID026927 Rev 2 1/12 www.st.com This is information on a product in full production. Contents STW48N60DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID026927 Rev 2