X-On Electronics has gained recognition as a prominent supplier of STW48N60M2-4 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW48N60M2-4 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW48N60M2-4 STMicroelectronics

STW48N60M2-4 electronic component of STMicroelectronics
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Part No.STW48N60M2-4
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 300W; TO247-4
Datasheet: STW48N60M2-4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 8.554 ea
Line Total: USD 8.55 
Availability - 29
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 8.554
3 : USD 7.392
7 : USD 6.986
30 : USD 6.734

   
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Technology
Polarisation
Case
Mounting
Kind Of Package
Features Of Semiconductor Devices
Type Of Transistor
Drain Current
Gate-Source Voltage
Drain-Source Voltage
On-State Resistance
Power Dissipation
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We are delighted to provide the STW48N60M2-4 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW48N60M2-4 and other electronic components in the MOSFETs category and beyond.

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STW48N60M2-4 Datasheet N-channel 600 V, 60 m typ., 42 A MDmesh M2 Power MOSFET in a TO247 4 package Features V T R max. I Order code DS Jmax. DS(on) D STW48N60M2-4 650 V 70 m 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge 4 3 2 Excellent output capacitance (C ) profile oss 1 100% avalanche tested TO247-4 Zener-protected Drain(1, TAB) Applications Switching applications Gate(4) Description Driver source (3) This device is an N-channel Power MOSFET developed using MDmesh M2 Power technology. Thanks to its strip layout and an improved vertical structure, the device source (2) AM10177v2Z exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status STW48N60M2-4 Device summary Order code STW48N60M2-4 Marking 48N60M2 Package TO247-4 Packing Tube DS10507 - Rev 4 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW48N60M2-4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 42 A D C I Drain current (continuous) at T = 100 C 26 A D C (1) I Drain current (pulsed) 168 A DM P Total power dissipation at T = 25 C 300 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns (3) MOSFET dv/dt ruggedness 50 V/ns dv/dt T Storage temperature range stg - 55 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 42 A, di/dt 400 A/s V < V , V = 400 V SD DS(peak) (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.42 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 7 A AR (pulse width limited by T ) jmax. Single pulse avalanche energy E 1 J AS (starting T = 25 C, I = I V = 50 V) j D AR DD DS10507 - Rev 4 page 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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