STW43NM50N STMicroelectronics

STW43NM50N N-channel 500 V, 0.070 , 37 A MDmesh II Power MOSFET TO-247 Features V R DSS DS(on) Type I D Tjmax max STW43NM50N 550 V < 0.085 37 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-247 Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 3 Table 1. Device summary Order code Marking Package Packaging STW43NM50N 43NM50N TO-247 Tube January 2010 Doc ID 14168 Rev 5 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s)Contents STW43NM50N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 14168 Rev 5 Obsolete Product(s) - Obsolete Product(s)