STP45N60DM6, STW45N60DM6 Datasheet N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Features TAB V R max. I Order code DS DS(on) D STP45N60DM6 600 V 0.099 30 A 3 3 2 2 STW45N60DM6 1 1 Fast-recovery body diode TO-247 TO-220 Lower R per area vs previous generation DS(on) D(2, TAB) Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness G(1) Zener-protected Applications S(3) AM01476v1 tab Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and Product status links ZVS phase-shift converters. STP45N60DM6 STW45N60DM6 Product summary Order code STP45N60DM6 Marking 45N60DM6 Package TO-220 Packing Tube Order code STW45N60DM6 Marking 45N60DM6 Package TO-247 Packing Tube DS11664 - Rev 3 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STP45N60DM6, STW45N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 30 A C I D Drain current (continuous) at T = 100 C 19 A C (1) I Drain current (pulsed) 95 A DM P Total power dissipation at T = 25 C 210 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by safe operating area 2. I 30 A, V (peak) < V , V = 400 V SD DS (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Value Symbol Parameter Unit TO-220 TO-247 R Thermal resistance junction-case C/W thj-case 0.6 R Thermal resistance junction-ambient 62.5 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 6 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 630 mJ AS j D AR DD DS11664 - Rev 3 page 2/15