X-On Electronics has gained recognition as a prominent supplier of STW45N60DM6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW45N60DM6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW45N60DM6 STMicroelectronics

STW45N60DM6 electronic component of STMicroelectronics
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Part No.STW45N60DM6
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages
Datasheet: STW45N60DM6 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.8318 ea
Line Total: USD 9.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 600
Multiples : 1
600 : USD 6.4273
1000 : USD 6.3958
2000 : USD 6.3655
2500 : USD 6.334
3000 : USD 6.3025
4000 : USD 6.2698
5000 : USD 6.2383
10000 : USD 6.2055
20000 : USD 6.1727
50000 : USD 6.1387

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 9.8318
5 : USD 8.0098
10 : USD 6.552
50 : USD 6.4947
100 : USD 6.1819
250 : USD 5.8275

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 8.1803
10 : USD 7.2707
30 : USD 6.7176
100 : USD 6.2524

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 9.225
10 : USD 8.0136
25 : USD 7.6356
100 : USD 6.6312
600 : USD 5.778
1200 : USD 5.4108

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 10.0276
3 : USD 6.5675
7 : USD 6.2012

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Configuration
Series
Transistor Type
Brand
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We are delighted to provide the STW45N60DM6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW45N60DM6 and other electronic components in the MOSFETs category and beyond.

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STP45N60DM6, STW45N60DM6 Datasheet N-channel 600 V, 0.085 typ., 30 A MDmesh DM6 Power MOSFETs in TO-220 and TO-247 packages Features TAB V R max. I Order code DS DS(on) D STP45N60DM6 600 V 0.099 30 A 3 3 2 2 STW45N60DM6 1 1 Fast-recovery body diode TO-247 TO-220 Lower R per area vs previous generation DS(on) D(2, TAB) Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness G(1) Zener-protected Applications S(3) AM01476v1 tab Switching applications Description These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q ), recovery time (t ) and excellent rr rr improvement in R per area with one of the most effective switching behaviors DS(on) available in the market for the most demanding high-efficiency bridge topologies and Product status links ZVS phase-shift converters. STP45N60DM6 STW45N60DM6 Product summary Order code STP45N60DM6 Marking 45N60DM6 Package TO-220 Packing Tube Order code STW45N60DM6 Marking 45N60DM6 Package TO-247 Packing Tube DS11664 - Rev 3 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STP45N60DM6, STW45N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 30 A C I D Drain current (continuous) at T = 100 C 19 A C (1) I Drain current (pulsed) 95 A DM P Total power dissipation at T = 25 C 210 W TOT C (2) dv/dt Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/s di/dt (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width limited by safe operating area 2. I 30 A, V (peak) < V , V = 400 V SD DS (BR)DSS DD 3. V 480 V DS Table 2. Thermal data Value Symbol Parameter Unit TO-220 TO-247 R Thermal resistance junction-case C/W thj-case 0.6 R Thermal resistance junction-ambient 62.5 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 6 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I V = 50 V) 630 mJ AS j D AR DD DS11664 - Rev 3 page 2/15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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