STW47NM60ND STMicroelectronics

STW47NM60ND Automotive-grade N-channel 600 V, 0.075 typ., 35 A FDmesh II Power MOSFET (with fast diode) in a TO-247 package Datasheet - production data Features Order code V T R max I DS JMAX DS(on) D STW47NM60ND 650 V 0.088 35 A Designed for automotive applications and AEC-Q101 qualified 3 2 The worldwide best R *area amongst the DS(on) 1 fast recovery diode devices TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche Figure 1. Internal schematic diagram capabilities. Applications Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power 3 MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is - V therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order code Marking Packages Packaging STW47NM60ND 47NM60ND TO-247 Tube October 2013 DocID18281 Rev 4 1/13 This is information on a product in full production. www.st.comContents STW47NM60ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID18281 Rev 4