STW50N65DM2AG STMicroelectronics

STW50N65DM2AG Datasheet Automotive-grade N-channel 650 V, 70 m typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Features V R max. I Order code DS DS(on) D STW50N65DM2AG 650 V 87 m 38 A 3 AEC-Q101 qualified 2 1 Fast-recovery body diode Extremely low gate charge and input capacitance TO-247 Low on-resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected Applications G(1) Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr NG1D2TS3Z with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW50N65DM2AG (1) Product summary Order code STW50N65DM2AG Marking 50N65DM2 Package TO-247 Packing Tube 1. The HTRB test was performed at 80% V in compliance with AEC-Q101 (BR)DSS rev. C. All the other tests were performed according to rev. D. DS11149 - Rev 3 - August 2020 www.st.com For further information contact your local STMicroelectronics sales office.STW50N65DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Gate-source voltage (static) 25 V V GS Gate-source voltage (dynamic AC (f > 1 Hz)) 30 Drain current (continuous) at T = 25 C 38 C I A D Drain current (continuous) at T = 100 C 24 C (1) I Drain current (pulsed) 152 A DM P Total power dissipation at T = 25 C TOT C 300 W (2) Peak diode recovery voltage slope 100 V/ns dv/dt (2) di/dt Peak diode recovery current slope 1000 A/s (3) dv/dt MOSFET dv/dt ruggedness 100 V/ns T Storage temperature stg -55 to 150 C T Operating junction temperature J 1. Pulse width is limited by safe operating area. 2. I 38 A, V peak < V , V = 80% V . SD DS (BR)DSS DD (BR)DSS 3. V 520 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.42 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive 7.5 A AR (1) E Single pulse avalanche energy 850 mJ AS 1. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS11149 - Rev 3 page 2/12