X-On Electronics has gained recognition as a prominent supplier of STW52NK25Z MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW52NK25Z MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW52NK25Z STMicroelectronics

STW52NK25Z electronic component of STMicroelectronics
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Part No.STW52NK25Z
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 250V; 32.76A; 300W; TO247
Datasheet: STW52NK25Z Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.1684 ea
Line Total: USD 9.17 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 600
Multiples : 1
600 : USD 5.0908
1000 : USD 5.0427
2000 : USD 5.0141
2500 : USD 4.9842
3000 : USD 4.9556
4000 : USD 4.9257
5000 : USD 4.8958
10000 : USD 4.8659
20000 : USD 4.8347
50000 : USD 4.8048

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 9.1684
10 : USD 6.4619
100 : USD 5.5597
500 : USD 4.8983
1000 : USD 4.2367

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 13
Multiples : 1
13 : USD 2.522
30 : USD 2.522
125 : USD 2.522
300 : USD 2.522
1250 : USD 2.522

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 10.153
10 : USD 6.6797
25 : USD 6.369
100 : USD 5.5302
600 : USD 4.8156

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.4684
3 : USD 4.9257
5 : USD 3.5687
13 : USD 3.3788

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 1.98
120 : USD 1.8627

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 4.4754
1200 : USD 4.1407
2400 : USD 4.0579
3600 : USD 4.0579

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 1.98
120 : USD 1.8627

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Termination Type
Transistor Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Kind Of Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STW52NK25Z from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW52NK25Z and other electronic components in the MOSFETs category and beyond.

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STW52NK25Z N-CHANNEL 250V - 0.033 - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D STW52NK25Z 250 V < 0.045 52 A 300 W TYPICAL R (on) = 0.033 DS EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 2 VERY GOOD MANUFACTURING 1 REPEATIBILITY TO-247 DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special Figure 2: Internal Schematic Diagram care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STW52NK25Z W52NK25Z TO-247 TUBE Rev. 2 November 2004 1/10STW52NK25Z Table 3: Absolute Maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 250 V DS GS V Drain-gate Voltage (R = 20 k ) 250 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C52 A D C I Drain Current (continuous) at T = 100C 32.76 A D C I ( ) Drain Current (pulsed) 208 A DM P Total Dissipation at T = 25C 300 W TOT C Derating Factor 2.38 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 6000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature -55 to 150 C j T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 52A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 0.42 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 52 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 500 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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