STW52NK25Z N-CHANNEL 250V - 0.033 - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE V R I Pw DSS DS(on) D STW52NK25Z 250 V < 0.045 52 A 300 W TYPICAL R (on) = 0.033 DS EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 2 VERY GOOD MANUFACTURING 1 REPEATIBILITY TO-247 DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special Figure 2: Internal Schematic Diagram care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS- FETs including revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STW52NK25Z W52NK25Z TO-247 TUBE Rev. 2 November 2004 1/10STW52NK25Z Table 3: Absolute Maximum ratings Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 250 V DS GS V Drain-gate Voltage (R = 20 k ) 250 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C52 A D C I Drain Current (continuous) at T = 100C 32.76 A D C I ( ) Drain Current (pulsed) 208 A DM P Total Dissipation at T = 25C 300 W TOT C Derating Factor 2.38 W/C V Gate source ESD(HBM-C=100pF, R=1.5K) 6000 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns T Operating Junction Temperature -55 to 150 C j T Storage Temperature stg ( ) Pulse width limited by safe operating area (1) I 52A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 0.42 C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 52 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 500 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD Table 6: GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10