STW56NM60N STMicroelectronics

STW56NM60N N-channel 600 V, 0.05 , 45 A TO-247 MDmesh II Power MOSFET Preliminary data Features R DS(on) Order code V I DSS D max STW56NM60N 600 V < 0.06 45 A 100% avalanche tested 3 Low input capacitance and gate charge 2 1 Low gate input resistance TO-247 Applications Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 - V Table 1. Device summary Order code Marking Package Packaging STW56NM60N 56NM60N TO-247 Tube July 2011 Doc ID 15723 Rev 2 1/11 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 11 change without notice. Contents STW56NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 3 Test circuits 6 4 Package mechanical data . 7 5 Revision history 8 2/11 Doc ID 15723 Rev 2