STW58N65DM2AG STMicroelectronics

STW58N65DM2AG Datasheet Automotive-grade N-channel 650 V, 0.058 typ., 48 A, MDmesh DM2 Power MOSFET in a TO-247 package Features Order code V R max. I P DS DS(on) D TOT STW58N65DM2AG 650 V 0.065 48 A 360 W 3 AEC-Q101 qualified 2 1 Fast-recovery body diode Extremely low gate charge and input capacitance TO-247 Low on-resistance 100% avalanche tested D(2) Extremely high dv/dt ruggedness Zener-protected G(1) Applications Switching applications S(3) NG1D2S3Z Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW58N65DM2AG Product summary Order code STW58N65DM2AG Marking 58N65DM2 Package TO-247 Packing Tube DS11265 - Rev 3 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW58N65DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 48 case I A D Drain current (continuous) at T = 100 C 30 case (1) I Drain current (pulsed) 150 A DM P Total dissipation at T = 25 C 360 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 48 A, di/dt=800 A/s, V peak < V , V = 80% V SD DS (BR)DSS DD (BR)DSS 3. V 520 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.35 thj-case C/W R Thermal resistance junction-ambient 50 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 7 A AR (2) E Single pulse avalanche energy 1300 mJ AS 1. Pulse width is limited by T Jmax. 2. Starting T = 25 C, I = I , V = 50 V J D AR DD DS11265 - Rev 3 page 2/13